Asm Japan K.k.

Samsung Electronics Co., Ltd.

Nobuo Matsuki

Atsuki Fukazawa

Yoshinori Morisada

Yasuyoshi Hyodo

Seijiro Umemoto

Masashi Yamaguchi

Manabu Kato

Satoshi Takahashi

Naoto Tsuji

Kamal Kishore Goundar

Woo Jin Lee

Jeongseok Ha

Naoki Ohara

Yijun Liu

Lee Jea Sik

Yuichi Naito

Aya Matsunoshita

Jea Sik Lee

Shingo Ikeda

Devendra Kumar

Kyu Tae Na

Eun Kyung Baek

Shinya Kaneko

Kiyoto Itoh

Johannes Bart Van Der Hilst

Tsunayuki Kimura

A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si&#x2014;O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

Method for forming silicon carbide film containing oxygen

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si&#x2014;N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si&#x2014;N bonds from the film.

Method for forming dielectric film using siloxane-silazane mixture

A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at &#x2212;50&#xb0; C. to 50&#xb0; C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.

Method for forming inorganic silazane-based dielectric film

A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si&#x2014;O bond and at least one bond selected from the group consisting of a Si&#x2014;Si bond, Si&#x2014;N bond, and Si&#x2014;H bond; introducing into the reaction chamber an additive gas constituted by C, H, and optionally O; controlling a susceptor at a temperature of &#x2212;50&#xb0; C. to 50&#xb0; C.; forming by plasma reaction an insulation film constituted by Si, O, H, and optionally N on an irregular surface of a substrate at a deposition rate of 100 nm/min or less; and heat-treating the substrate with the insulation film, thereby increasing a density of the insulation film to more than 2.1 g/cmas a result of the heat treatment.

Method for forming insulation film having high density

A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Method of forming silicon-containing insulation film having low dielectric constant and low film stress

A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si&#x2014;N, Si&#x2014;Si, and Si&#x2014;H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at &#x2212;50&#xb0; C. to 50&#xb0; C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si&#x2014;O bonds in the film.

Method for forming silazane-based dielectric film

A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.

Method of forming a carbon polymer film using plasma CVD

A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.

Device isolation technology on semiconductor substrate

A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.

Method of stabilizing film quality of low-dielectric constant film

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and COgas or Hgas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

Method of forming carbon polymer film using plasma CVD

A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si&#x2014;O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

Method for forming insulation film

A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.

Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation

A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

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Tama, Japan

Nobuo Matsuki