Canon Kabushiki Kaisha

Other

Canon Anelva Corporation

Nobumasa Suzuki

Nobuyoshi Tanaka

Masaki Hirayama

Hideo Kitagawa

Toshikuni Shinohara

Hiroshi Ohsawa

Tadahiro Ohmi

Senichi Hayashi

Kazuo Tsubouchi

Nobuo Mikoshiba

Kazuya Masu

Shinzo Uchiyama

Shigenobu Yokoshima

Toshimori Miyakoshi

Naomu Kitano

Kunio Takada

Yusuke Fukuchi

Kazuho Sone

Hirohisa Oda

Manabu Matsuo

A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

Process for forming dielectric films

An electron source including: a plurality of electron-emitting devices connected to a matrix wiring of scan lines and modulation lines on a substrate, wherein each of the electron-emitting devices includes a cathode electrode connected to the scan line, a gate electrode connected to the modulation line and a plurality of electron-emitting members, the cathode electrode is configured in a first comb-like structure for applying an electric potential of the cathode to the plurality of electron-emitting members, the gate electrode is configured in a second comb-like structure for applying an electric potential of the gate to the plurality of electron-emitting members, and each of the first and second comb-like structures is provided with a plurality of comb-teeth, and a connecting electrode electrically connected to the plurality of teeth in at least one of the first and second comb-like structures.

Electron source and image display apparatus

A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200&#xb0; C. to 400&#xb0; C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

Surface modification method

A plasma processing system in which air in a plasma processing chamber is exhausted by an exhaust unit and a microwave is supplied to the plasma processing chamber through an annular waveguide which is provided at predetermined intervals in a circumferential direction on the same plane facing a surface of an object to be processed on the plasma processing chamber side to generate plasma within the plasma processing chamber. The annular waveguide is separated into two layers of an input side waveguide and an output side waveguide. The slots are provided between these waveguides at predetermined intervals in a circumferential direction.

Plasma processing system and surface processing method

In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.

Microwave applicator, plasma processing apparatus having same, and plasma processing method

In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.

Laser oscillating apparatus, exposure apparatus using the same and device fabrication method

An excimer laser gas in a laser tube is excited by a microwave introduced from awaveguide , and electric field concentration occurs in a slit-shaped gap provided in a plate member , causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.

Laser oscillating apparatus, exposure apparatus, and device fabrication method

In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots ( ) are formed at a predetermined pitch in a long end face (H plane) of each waveguide ( ) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).

Laser oscillating apparatus with slotted waveguide

To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.

Plasma processing apparatus having permeable window covered with light shielding film

In order to keep the balance of microwave plasma density to suppress uneven processing in the circumferential direction of a circular waveguide, in a plasma processing apparatus comprising a plasma generation chamber, a support means for supporting an article, a gas introducing means, and an evacuation means, two introducing ports are provided in a microwave applicator for supplying microwaves through a dielectric window, and microwaves distributed with a junction circuit are guided to the introducing ports such that electric field vectors are in predetermined directions.

Plasma processing apparatus having circular waveguide, and plasma processing method

A plasma is excited uniformly as a whole over the length of each slot. A laser oscillating apparatus is designed to excite a laser gas in a laser tube ( ) by introducing electromagnetic waves into the laser tube through a plurality of slots ( ) formed in a waveguide wall and generate a laser beam by resonating the light generated from the laser gas. A least one electrode ( ) is placed near the slot ( ). By giving a predetermined current density to the electrode ( ), the intensity distribution of light generated from the laser gas above the slot ( ) is controlled.

Laser oscillating apparatus

A plasma density measuring method which includes producing a surface wave at an interface between a dielectric member and a plasma, and measuring at least one of a plasma density and a relative change in plasma density, on the basis of the surface wave. A plasma processing system including a container having a window, and for storing therein a gas introduced thereinto, a dielectric member for closing the window of the container, a plasma voltage source for applying a high frequency voltage through the dielectric member to produce a plasma by use of the gas inside the container, wherein a predetermined process is performed by use of the thus produced plasma, a detecting system for detecting an electric field intensity distribution of a surface wave propagated through the dielectric member, and a feedback system for feeding back the result of detection by the detecting system, to determine a processing condition for the process.

Plasma density measuring method and apparatus, and plasma processing system using the same

A plasma processing apparatus is disclosed which comprises a container which can be evacuated; a gas supply means for supplying a gas to the inside of the container; and a microwave supply means for supplying microwaves to generate a plasma in the container, the plasma being utilized to process an article, wherein the microwave supply means is a microwave applicator which is provided with an annular waveguide having a planar H-plane with a plurality of slots provided apart from each other and a rectangular cross section perpendicular to the traveling direction of microwaves and which supplies microwaves to the inside of the container through a dielectric window of the container from the plurality of slots provided in the planar H-plane, and wherein the gas supply means is provided a gas emission port through which the gas is emitted toward the planar H-plane.

Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method

A film forming apparatus for forming a minute thin film at a high depositing rate, which comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a gas supply means for supplying a sputtering gas for sputtering the target into a reaction chamber, and an electric power supply means for supplying an electric power for causing an electric discharge between the target and the substrate, wherein a partition member having a plurality of openings provided between the target and the substrate, and wherein means for supplying a reaction gas and a microwave are provided in a space between the partition member and the substrate.

Thin film forming apparatus and method of forming thin film of compound by using the same

A process for evacuating the inside of a vacuum vessel before a processing gas is introduced into the vacuum vessel. The process includes steps of evacuating the inside of the vacuum vessel through a by-pass evacuation path such that a pressure reduction rate of the pressure inside the vacuum vessel is gradually reduced immediately after the start of evacuation, and opening an evacuation conductance control valve, provided in a principal evacuation path, during or after the evacuation step such that conductance of the evacuation conductance control valve is gradually increased with an elapse of evacuation time. The timing at which the evacuation conductance control valve is started to be opened is controlled so that a pressure reduction rate curve of the pressure inside the vacuum vessel has a minimum value and a maximum value. The minimum value becomes 0.2 times or more a value given immediately after the start of evacuation and the maximum value becomes not greater than the value given immediately after the start of evacuation.

Growing community of inventors

Yokohama, Japan

Nobumasa Suzuki