Hitachi-kokusai Electric Inc.

Nobuhito Shima

Masanori Sakai

Kazuyuki Toyoda

Kazuyuki Okuda

Nobuo Ishimaru

Toru Kagaya

Tadashi Kontani

Seiji Watanabe

Taketoshi Sato

Yasuo Kunii

Yasushi Yagi

Tsutomu Tanaka

Osamu Kasahara

Mamoru Sueyoshi

Tetsuo Yamamoto

A substrate processing device comprises a reaction vesselforming a space receiving a substrateand adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust portformed in the reaction vesselfor exhausting the reaction vessel, and a gas supply systemA,B for supplying at least a plurality of reaction gases into the reaction vessel, the gas supply systemA,B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrateto thereby remove adherents in the reaction vessel, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vesselafter the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.

Semiconductor device producing method

A substrate processing apparatus includes a processing chamber in which a substrate is mounted, a gas supply unit that supplies processing gas into the processing chamber, a gas exhaust unit that exhausts atmospheric gas in the processing chamber, first and second electrodes to which high-frequency power is applied to set the processing gas to an active state. Each of the first and second electrodes includes a core wire formed of a metal and plural pipe bodies that are joined to one another through the core wire so as to be bendable, and less thermally deformed than the core wire.

Substrate processing apparatus

A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Substrate processing apparatus and reaction container

A film-forming method that includes providing a substrate to be film-formed in a reaction chamber of an apparatus that includes: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the first gas supply pipe; and a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir; and the steps of alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times to form a film on the substrate, and wherein when the first gas is supplied, the gas reservoir or the bypass line is selected to supply the first gas into the reaction chamber through the first gas supply pipe, and when the second gas is supplied the second gas is supplied through the second gas supply pipe.

Substrate processing method for film formation

An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

Apparatus and method for use in manufacturing a semiconductor device

Growing community of inventors

Tokyo, Japan

Nobuhito Shima