Tokyo Electron Limited

Nobuhiro Wada

Hiroshi Tsujimoto

Makoto Kobayashi

Jun Tamura

Mamoru Naoi

Jun Oyabu

Tetsuji Sato

Masato Horiguchi

Akihiro Yoshimura

Kiwamu Fujimoto

A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Substrate processing apparatus

Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Substrate processing method and substrate processing apparatus

A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrodeand a lower electrodefacing each other within a processing chamber; a lift pinthat is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifterthat elevates the lift pin up and down; and a controllerthat elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.

Substrate processing apparatus, method for measuring distance between electrodes, and storage medium storing program

The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF/Ar/Nmixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply sourcewith the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vesselare whirled by the purging gas to be discharged through an exhaust portand through an exhaust pipeWhen the purging step is completed, the second step plasma etching is performed with CF/Ar/Nmixed gas.

Growing community of inventors

Nirasaki, Japan

Nobuhiro Wada