Seiko Instruments Inc

Other

Agency of Industrial Science and Technology

Nobuhiro Shimizu

Yoshiharu Shirakawabe

Hiroshi Takahashi

Norio Chiba

Chiaki Yasumuro

Hiroshi Muramatsu

Kazuo Chinone

Tadashi Arai

Michel Despont

Satoshi Nakayama

Toshimitsu Morooka

Susumu Ichihara

Akikazu Odawara

Akira Inoue

Satoru Yabe

Takehiro Yamaoka

Yukihiro Sato

Shogo Kiryu

Walter H&auml;berle

Jurgen P Brugger

Peter Vettiger

Kazuo Chinome

Microprobe and scanning probe apparatus having microprobe

A microprobe has a cantilever having a first lever portion having a free end portion, a second lever portion having a front end portion from which the first lever portion projects, and a support portion for supporting the second lever portion. A piezoresistive element is disposed on the second lever portion for bending the second lever portion.

Microprobe and sample surface measuring apparatus

A multiprobe device is provided for a scanning probe instrument and has a plurality of individually-selectable probe members for conducting scanning probe operations. The multiprobe has a plurality of cantilever probes supported by a support member. Each of the cantilevers is individually-selectable for use in conducting scanning probe operations, and each has a different resonance frequency from the others. In a preferred embodiment, portions of the respective cantilevers that are brought into contact with a sample to conduct scanning probe operations are arranged in a substantially linear configuration. A given one of the cantilevers is selected by vibrating the multiprobe at the resonance frequency of the given cantilever.

Multiprobe and scanning probe microscope

A scanning probe apparatus and a self-exciting cantilever probe therefor are provided for measuring a characteristic of a sample by scanning a lever of the probe across the sample surface. The probe has a deflectable lever extending from a base and formed integrally therewith, and a resistive body provided on the lever to excite the lever in response to a periodic bias signal applied to the resistive body. In addition, the resistive body has a resistance value that varies in response to deflection of the lever so that the resistance of the resistive body may be monitored to detect deflection of the lever.

Self-exciting and self-detecting probe and scanning probe apparatus

A correlation sample of scanning probe microscope enable to detect correctly each force performing as a standard without influence of irregular data of surface of the sample. Photo-resist film is applied on surface of a silicon substrate, and the resist mask is patterned. Hollow portions having vertical wall face are formed at the silicon substrate by carrying out anisotropic etching using the resist mask for etching mask. After that, metal is deposited from upper side of resist mask by deposition method, the metal upper than the resist mask by lift off process is removed, and a correlation sample in which the metal is buried in the hollow portions of the silicon substrate is formed. Surface of the sample can be flattened by coating DLC film on surface of the correlation sample.

Correlation sample for scanning probe microscope and method of processing the correlation sample

A self-detecting type of SPM probe can eliminate influences of a leak current between piezo-resistors each other, between another piezo-resistors opposite to each other, or between the piezo-resistor and the other one, or of a carrier generated by irradiation of light thereto over the piezo-resistors by forming impurity diffusion layers each consisting of a conductive type (n well regions) reverse to a conductive type of a semiconductor substrate (p-type silicon substrate) on each interface between each of the piezo-resistors and the semiconductor substrate respectively to insulate the elements from one another.

Self-detecting type of SPM probe and SPM device

To provide an SPM probe comprising an SPM probe having a piezoresistor and enable to measure surface voltage of a sample. An SPM probe forming a piezoresistor has conductivity covering metal film on a tip surface , and conductive layer is wired from the metal film so as to be one side of an electrode. By that, it is possible to measure interaction between the sample surface by detecting bending quantity of the SPM probe by the piezoresistor and the tip, and to measure voltage of the sample surface without using a detector needing complicated adjustment.

Probe for scanning probe microscope (SPM) and SPM device

A method of fabricating a probe comprises disposing a resist film over a base plate. A mask pattern comprised of a cantilever mask pattern and a probe mask pattern is disposed over the base plate for forming a cantilever portion and a probe portion, respectively, of a probe so that the probe mask pattern subtends an angle relative to the base plate that is no greater than an angle made by at least two crystal planes of a tip of the probe portion to the base plate. The mask pattern is then exposed, and an etching operation is conducted using the exposed mask pattern to form the probe having the cantilever portion and the probe portion.

Method of fabricating probe force atomic force microscope

A semiconductor strain sensor comprises a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end. A Schottky junction is disposed on the surface portion of the semiconductor cantilever probe and is positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion. The amount of displacement of the free end of the cantilever probe is detected on the basis of a change in the electrical characteristic of the Schottky junction.

Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor

A cantilever unit comprises a substrate and a self-detecting type cantilever attached to the substrate. The self-detecting type cantilever has a cantilever portion extending from the substrate and a probe tip depending from the cantilever portion and detects a deflection of the cantilever portion when, for example, the probe tip is scanned over a surface of a sample. A visual identification portion of the cantilever unit permits the cantilever unit to be visually distinguished from other cantilever units.

Cantilever unit and scanning probe microscope utilizing the cantilever unit

A semiconductor manufacturing device comprises a holder having sealing members and supporting a semiconductor substrate so that an open space is formed above the semiconductor substrate and a sealed space is formed below the semiconductor substrate. The semiconductor substrate has a first main surface exposed to the open space and a second main surface exposed to the sealed space. When the holder is immersed in an etching solution, the first main surface of the semiconductor substrate is exposed to the etching solution and subjected to wet etching while the etching solution does not flow into the sealed space.

Semiconductor manufacturing device

A semiconductor distortion sensor comprises a flexible cantilever having a free end portion and a fixed end portion. A p-type region and an n-type region define a pn junction formed in a preselected region of the cantilever where stress-caused distortion occurs due to flexure of the cantilever upon displacement of the free end portion of the cantilever. When the free end portion of the cantilever is subjected to displacement, the cantilever is flexed and the amount of displacement of the free end portion of the cantilever is detected on the basis of a change in an electrical characteristic of the pn junction.

Scanning probe microscope, and semiconductor distortion sensor for use

A cantilever probe for scanning a sample surface comprises a cantilever having a free end and a fixed end. A first support section is disposed at the free end and extends along a first plane. A probe is formed on the first support section for scanning movement relative to the sample surface. A second support section is disposed at the fixed end and extends along a second plane different from the first plane. A beam section interconnects the first support member and the second support member to one another and extends along a third plane different from the first and second planes.

Cantilever probe and scanning type probe microscope utilizing the

A probe for an atomic force microscope comprises a body having a cantilever portion and a probe portion made from a single-crystal material. The probe portion has a tip formed as a vertex of three planes including at least two crystal planes.

Probe for atomic force microscope and atomic force microscope

A superconducting loop is formed by two Josephson junctions connected to both ends of a washer coil which serves also as a pick-up coil. The washer coil which is a magnetic field detection portion is constituted by two coils, i.e., a coil having a radius r.sub.1 and a number of turns n.sub.1 and a coil having a radius r.sub.2 and a number of turns n.sub.2 which are in the form of concentric circular loops. The two coils are coupled in opposite directions and are designed so that effective areas n.sub.1 .pi.r.sub.1.sup.2 and n.sub.2 .pi.r.sub.2.sup.2 are equal to each other. Since a magnetic field is directly detected by the washer coil, sensitivity to a magnetic field is enhanced. This makes it possible to obtain sufficient sensitivity to a magnetic field even if the area of the magnetic field detection portion is reduced to improve spatial resolution. It is, therefore, possible to realize a radial differential SQUID magnetic flux meter which has good spatial resolution and coil balance and which is suitable for mass production.

Growing community of inventors

Chiba, Japan

Nobuhiro Shimizu