Agc Inc.

Nobuhiko Ikenoya

Yusuke Hirabayashi

Yuzo Okamura

In a substrate for use as a mask blank including a first main surface, a normal region, a frame-shaped region and inner region are present on the first main surface. The frame-shaped region includes first to fourth corner region and first to fourth middle region. The inner region has a flatness of 100 nm or less, the flatness being determined on the basis of a least-squares plane PPof the normal region. When one of the corner regions is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, the specific relationship regarding the surface profile is satisfied in the n-th corner region and the first and second near middle regions.

Substrate for use as mask blank, and mask blank

A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by  A flatness of a sum of compositing all of aP(x)P(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Glass substrate for mask blank, mask blank, photomask, and method for manufacturing glass substrate for mask blank

A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aP(x)P(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30. 

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Chiyoda-ku, Japan

Nobuhiko Ikenoya