Canon Anelva Corporation

Anelva Corporation

Sony Corporation

Nobuaki Tsuchiya

Tatsunori Sato

Kazunari Sekiya

Masaharu Tanabe

Tadashi Inoue

Hiroshi Sasamoto

Atsushi Takeda

Masayoshi Ikeda

Yasumi Sago

Hisaaki Sato

Takayuki Moriwaki

Toshihisa Hyakudai

Gerd Spalink

Shigeru Mizuno

Tsutomu Tsukada

Tsutomu Takamori

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter.

Plasma processing apparatus

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5&#x2264;X/Rp&#x2264;5000 is satisfied.

A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.

Plasma processing apparatus, plasma processing method, and memory medium

Disclosed herein is an analog television broadcast signal receiving apparatus including: a tuner section configured to convert an analog television broadcast signal into a predetermined intermediate frequency band signal; a demodulation circuit section configured to obtain a picture output signal and a sound intermediate frequency signal from the predetermined intermediate frequency band signal coming from the tuner section; a picture processing circuit section configured to convert the picture output signal into a display-ready picture signal; a sound demodulation processing circuit section configured to demodulate the sound intermediate frequency signal; and a control section.

Analog TV broadcast signal receiving apparatus and analog TV broadcast signal demodulating apparatus

This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second HF electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source.

High-frequency plasma processing apparatus

This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source.

This application discloses the technique of the RF plasma processing using two RF waves of different frequencies, where plasma is generate and retained sufficiently and stably. The first frequency is for generating plasma by igniting a discharge, and the second frequency is for generating self-biasing voltage at a substrate to be processed. The wave of the second frequency is applied with a time-lag after applying the RF wave of the first frequency. This application also discloses the impedance matching technique in the RF plasma processing, where impedance to be provided is optimized both for igniting the discharge and for stabilizing the plasma.

RF plasma processing method and RF plasma processing system

A plasma processing apparatus includes a cathode,having a large diameter part,and a long thin small diameter part,, and the upper end surface of the large diameter part,faces the plasma forming space,. The substrate,which is to be processed is mounted on the upper end surface of the large diameter part,. The lower end of the small diameter part,is connected via the matching circuit,to the high frequency power source,. The transmission path within the chamber comprises a large diameter coaxial line, a small diameter coaxial line and a radial line which connects them. The large diameter coaxial line includes the large diameter part,, the first side wall,and the insulator,. The radial line includes the lower surface of the large diameter part,, the upper surface of the bottom plate,and the gap,between them. The small diameter coaxial line includes the small diameter part,, the second side wall,and the gap,. Appropriate impedance matching is achieved between the two coaxial lines and the radial line.

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Hamura, Japan

Nobuaki Tsuchiya