Sanyo Electric Co., Ltd.

Sanyo Semiconductor Co., Ltd.

Semiconductor Components Industries, LLC

Noboru Okubo

Takashi Noma

Hiroyuki Shinogi

Hiroshi Yamada

Kazuo Okada

Katsuhiko Kitagawa

Shinzo Ishibe

Yuichi Morita

Shigeki Otsuka

Mitsuru Okigawa

Yusheng Lin

At least one circuit element may be formed on a front side of a ringed substrate, and the ringed substrate may be mounted on a mounting chuck. The mounting chuck may have an inner raised portion configured to receive the thinned portion of the substrate thereon, and a recessed ring around a perimeter of the mounting chuck configured to receive the outer ring of the ringed substrate therein. At least one solder bump may be formed that is electrically connected to the at least one circuit element, while the ringed wafer is disposed on the mounting chuck.

Solder bump formation using wafer with ring

A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

Semiconductor device and manufacturing method thereof

This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device componentand a pad electrodeelectrically connected with the device componentare formed on a semiconductor substrate. A supporting memberis bonded to a surface of the semiconductor substratethrough an adhesive layer. There is formed a through-holein the supporting memberpenetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole. A depressed portionis formed in a partial region of the top surface of the supporting member. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor devicein an upper layer to an inside of the depressed portion

The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

Semiconductor device

A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.

This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

Semiconductor device and manufacturing method of the same

The invention is directed to providing a package type semiconductor device with high reliability and smaller size and a method of manufacturing the same. A semiconductor substrate formed with a device element and a pad electrode on its front surface is prepared. The semiconductor substrate is then selectively etched from its back surface to form an opening. A second insulation film is then formed covering the side and back surfaces of the semiconductor substrate. First and second insulation films on the bottom of the opening are then selectively removed to expose a portion of the pad electrode. A wiring layer is then formed along the side surface of the semiconductor substrate, being electrically connected with the exposed pad electrode. An electrode connect layer is then formed covering the wiring layer. A protection layer is then formed covering the back surface of the semiconductor substrate and having an opening in a region for formation of a sidewall electrode. Then, the sidewall electrode is formed in a region exposed by the opening of the protection layer.

Growing community of inventors

Saitama, Japan

Noboru Okubo