Kabushiki Kaisha Toshiba

Noboru Okane

Junya Sagara

Yoshio Iizuka

Ryoji Matsushima

Mitsuhiro Nakao

Katsuhiro Ishida

Kazuhiro Yamamori

Kuniyuki Ohnishi

A wire bonding method involves bonding a wire in order at a first bonding point and a second bonding point; raising a capillary, through which the wire is inserted, on the second bonding point; cutting the wire by closing a clamper provided above the capillary at a time when the capillary has reached a prescribed height; and measuring a load incurred on the wire at a time of cutting of the wire.

Wire bonding apparatus and wire bonding method

A semiconductor device has a plurality of bare chips stacked on at least one of first and second main surfaces oppositely arranged on a support substrate, spacers arranged between two bare chips arranged adjacently in up and down direction among the plurality of bare chips, and inner leads which are arranged at both sides in a horizontal direction of the support substrate and are connected to pads of the bare chips via bonding wires, wherein the bonding wires which connect the pads of the bare chips at one end side of the spacers to the corresponding inner leads, are arranged not to contact the bare chip at the other end side of the same spacer.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Yokkaichi, Japan

Noboru Okane