Nec Electronics Corporation

Fujitsu Corporation

Nec Corporation

Renesas Electronics Corporation

Noboru Morita

Tatsuya Usami

Koichi Ohto

Sadayuki Ohnishi

Yoichi Sasaki

Koji Arita

Ryohei Kitao

Shigeaki Okutani

Toshiro Nakazuru

Kazuhiko Endo

Kouji Arita

Ryouhei Kitao

Youichi Sasaki

Hidenobu Miyamoto

Kouichi Ohto

Manabu Yamazaki

Takashi Tonegawa

Michio Hibi

Keiji Sato

Kouichi Owto

A communication device includes a storage unit that stores a predetermined eye mask pattern indicating a receivable range, a receiving unit that receives data from the other communication device, a waveform comparing unit for comparing a waveform of the received data with the eye mask pattern to generate comparison result data and a transmission unit for transmitting the comparison result data to the other communication device.

Communication device and communication system

An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good preventive function against the Cu diffusion, a low dielectric constant and excellent adhesiveness to the Cu interconnection and a manufacturing method thereof. The barrier film (for instance, a second barrier film) disposed between the interconnection or the via plug and its overlying interlayer insulating film is made to have a layered structure made of a plurality of films containing silicon and carbon (preferably, silicon, carbon and nitrogen), with different carbon contents, and, in particular, a low-carbon-concentration filmwith a small carbon content is set to be a lower layer therein and a high-carbon-concentration filmwith a large carbon content is set to be an upper layer therein, whereby the effectual prevention against the Cu diffusion, a high etching selection ratio and good adhesiveness to the Cu interconnection can be certainly provided by the presence of the low-carbon-concentration film, while the overall dielectric constant can be well reduced by the presence of the high-carbon-concentration film

Method of manufacturing a semiconductor device

In a method of manufacturing a semiconductor device where at least one insulating layer structure having a metal wiring constitution is formed to thereby construct a multi-layered wiring arrangement, a first SiOCH layer is produced. Then, a surface section of the first SiOCH layer is treated to change the surface section of the first SiOCH layer to a second SiOCH layer which features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer and an oxygen (O) density higher than that of the first SiOCH layer. Finally, a silicon dioxide (SiO) layer is formed on the second SiOCH layer.

[object Object]

The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced. Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance. The present invention relates to an organic film made of one of SiOCH, SiCHN and SiCH that is formed using, as a source, a polyorganosilane whose C/Si ratio is at least 5 or greater and molecular weight is 100 or greater, and a semiconductor device wherein such an organic insulating film is used, and more particularly to a semiconductor device having a trench structure.

Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof

A cyclic equation setting unit transforms and sets a Taylor series equation for calculating a sine function into a single cyclic equation common to terms of the Taylor series equation, the single cyclic equation having a new known number Q that is defined by multiplying a known number Q and the square of a variable X, shifting the result by a shift number S and then adding a constant K thereto. An adjustment unit adjusts and prepares the shift number S such that within a variation range of the variable X the variable X has a maximum value 1 with the constant K being not greater than 1. A cyclic equation executing unit inputs and converts angle information i to the variable X, and executing the cyclic equation in sequence from higher order term to lower order term for the number of terms of the Taylor series equation to derive a sine function of the angle information i.

Arithmetic method and function arithmetic circuit for a fast fourier transform

Input data is divided into a plurality of blocks, and the blocks are corresponded to each address of the lookup table, and a block is divided into a plurality of sections according to the change of the output data, and at this time position information to indicates the boundary of the section, and output data in each section are stored in an address corresponding to each block, so that the memory capacity required for the lookup table can be decreased.

Lookup table and data acquisition method

A semiconductor devicecomprises a SiCN filmformed on a semiconductor substrate (not shown), a first SiOC filmformed thereon, a SiCN filmformed thereon, a second SiOC filmformed thereon, a SiOfilmand a SiCN filmformed thereon. The first SiOC filmhas a barrier metal layerand viaformed therein, and the second SiOC filmhas a barrier metal layerand wiring metal layerformed therein. Carbon content of the second SiOC filmis adjusted larger than that of the first SiOC film. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si&#x2014;CH2 bond in the carbon containing silicon oxide film. The proportion of Si&#x2014;CH2 bond (1360 cm-1) to Si&#x2014;CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.

Carbon containing silicon oxide film having high ashing tolerance and adhesion

A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/Hgas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

Manufacturing method of semiconductor device

An object of the present invention is to improve the inter-layer adhesiveness of the diffusion barrier film while maintaining the lower dielectric constant of the diffusion barrier film. A diffusion barrier film for a copper interconnect comprises an insulating material containing silicon, carbon, hydrogen and nitrogen as constituent elements, and also containing Si&#x2014;H bond, Si&#x2014;C bond and methylene bond (&#x2014;CH&#x2014;). The insulating material involves I/Iof not lower than 0.067 and I/Iof not higher than 0.0067 appeared in an infrared absorption spectrum; where Iis defined as an absorption area of the infrared absorption band having a peak near 810 cm, Iis defined as an absorption area of the infrared absorption band having a peak near 2,120 cmand Iis defined as an absorption area of the infrared absorption band having a peak near 1,250 cm.

Semiconductor device and method for manufacturing the same

A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating filmformed on the semiconductor substrate and a multiple-layered insulating filmprovided on the interlayer insulating film. The semiconductor device also includes an electric conductor that extends through the multiple-layered insulating filmand includes a Cu filmand a barrier metal film. The barrier metal filmis covers side surfaces and a bottom surface of the Cu film. An insulating filmis disposed between the multiple-layered insulating filmand the electric conductor (i.e., Cu filmand barrier metal film).

Semiconductor device and method for manufacturing same

A Fourier transform apparatus whose pipeline width is independent of transform point number of individual pipeline FFT circuits in each stage and composed of a preceding stage and a succeeding stage. Each of the stages includes M(power of 2)-point radix 2 pipeline FFT circuits each having two-parallel inputs/outputs in a number of a (divisor of M) which are equal in respect to the transform point number and data permutating means for data supply to the transform means of each stage so that the pipeline width of the Fourier transform apparatus is made independent of the transform point numbers of the individual pipeline FFT circuits in each stage.

Fourier transform apparatus

An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si&#x2014;CH2 bond therein. The proportion of Si&#x2014;CH2 bond (1360 cm&#x2212;1) to Si&#x2014;CH3 bond (1270 cm&#x2212;1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

Growing community of inventors

Kanagawa, Japan

Noboru Morita