Samsung Electronics Co., Ltd.

Ulvac, Inc.

No-Hyun Huh

Ki-Young Yun

Seung-Ki Chae

Jung-Hyun Hwang

Il-Kyoung Kim

Seiichi Takahashi

Kengo Tsutsumi

Kwang-Myung Lee

Shinji Yanagisawa

Sung-Wook Park

Chang-Won Choi

Sung-wook Park

Wan-Goo Hwang

Doo-Won Lee

Jae-Wook Kim

Woo-Seok Kim

Jae-Hyuck An

Myeong-Jin Kim

Tae-Won Lee

Young-Ha Yoon

Tae-Sub Im

Byeung-Wook Choi

Won-Soon Lee

Kyoung-Ho Jang

A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Etching apparatus and etching method

An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Ion implanter with etch prevention member(s)

In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamberexcessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

Etching method

An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.

Window for allowing end point of etching process to be detected and etching device comprising the same

A method of forming contacts of a semiconductor device while improving a step coverage and increasing margins between the device and an adjacent device. The novel method comprises the steps of forming an interlayer insulating film. A contact hole is formed in the interlayer insulating film. A mask layer is deposited over the contact hole to a thickness sufficient to withstand the planarization process and is planarization-etched. Wet-etching is performed over the entire semiconductor substrate, thereby etching the interlayer insulating film, wherein the wet-etching is characterized in that exposed portions of the interlayer insulating film outside of the contact hole and interfacing the mask layer are etched faster than other upper exposed portions of the interlayer insulating film. As a result, the contact hole has a sloped-sidewalls profile. With this sloped profile of the contact sidewalls, the step coverage of the metal line can be improved and the horizontal margins for isolating devices is increased, thus improving the degree of integration.

Method of forming contacts for a semiconductor device

Growing community of inventors

Suwon, South Korea

No-Hyun Huh