Intel Corporation

Nitika Goel

Jack T Kavalieros

Robert S Chau

Gilbert W Dewey

Ravi Pillarisetty

Marko Radosavljevic

Willy Rachmady

Matthew V Metz

Van H Le

Han Wui Then

Sansaptak W Dasgupta

Niloy Mukherjee

Nancy M Zelick

Benjamin Chu-King

An embodiment of the invention includes an epitaxial layer that directly contacts, for example, a nanowire, fin, or pillar in a manner that allows the layer to relax with two or three degrees of freedom. The epitaxial layer may be included in a channel region of a transistor. The nanowire, fin, or pillar may be removed to provide greater access to the epitaxial layer. Doing so may allow for a 'all-around gate' structure where the gate surrounds the top, bottom, and sidewalls of the epitaxial layer. Other embodiments are described herein.

Epitaxial film on nanoscale structure

Growing community of inventors

Austin, TX, United States of America

Nitika Goel