Applied Materials, Inc.

Nipun Misra

Kenneth S Collins

Kartik Ramaswamy

James D Carducci

Shahid Rauf

Leonid Dorf

Zhigang Chen

Zheng John Ye

Igor Markovsky

Steven Lane

Gary Leray

Yang Yang

Douglas A Buchberger, Jr

Kallol Bera

Ajit Balakrishna

Lawrence Wong

Gonzalo Monroy

Larry D Elizaga

Ming-Feng Wu

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Symmetric VHF source for a plasma reactor

In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.

Electron beam plasma source with reduced metal contamination

A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.

Temperature controlled chamber liner

A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution.

Electron beam plasma source with segmented suppression electrode for uniform plasma generation

Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.

Plasma reactor with electron beam plasma source having a uniform magnetic field

A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.

Electron beam plasma source with arrayed plasma sources for uniform plasma generation

A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.

Electron beam plasma source with segmented beam dump for uniform plasma generation

The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.

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San Jose, CA, United States of America

Nipun Misra