Globalfoundries Inc.

Varian Semiconductor Equipment Associates, Inc.

Ning Zhan

Chengwen Pei

Eric J Bergman

Kwangduk Douglas Lee

John Lee Klocke

Edward P Maciejewski

Terrance Y Lee

Rajesh Prasad

Kyu-Ha Shim

Harry S Whitesell

Anthony I-Chih Chou

Tzu-Yu Liu

James Cournoyer

A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350&#xb0; C.

Techniques for improved removal of sacrificial mask

Fabrication methods and structure include: providing a wafer with at least one fin extended above a substrate in a first region, and at least one fin extended above the substrate in a second region of the wafer; forming a gate structure extending at least partially over the at least one fin to define a semiconductor device region in the first region; implanting a dopant into the at least one fin in the first region and into the at least one fin in the second region of the wafer, where the implanting of the dopant into the at least one fin of the second region modulates a physical property of the at least one fin to define a resistor device region in the second region; and disposing a conductive material at least partially over the at least one fin in the first region and over the at least one fin in the second region of the wafer, in part, to form a source and drain contact in the first region, and a fin-type metal-semiconductor resistor in the second region.

Fin-type metal-semiconductor resistors and fabrication methods thereof

Growing community of inventors

Scarsdale, NY, United States of America

Ning Zhan