Carl-zeiss-smt Ag

Carl Zeiss Smt Gmbh

Carl-zeiss-stiftung

Carl Zeiss Semiconductor Manufacturing Technologies Ag

Nils Dieckmann

Damian Fiolka

Toralf Gruner

Johannes Wangler

Michael Totzeck

Daniel Kraehmer

Markus Schwab

Manfred Maul

Aksel Goehnermeier

Markus Brotsack

Markus Zenzinger

Martin Antoni

Oliver Natt

Christian Hettich

Wolfgang Singer

Michael Gerhard

Franz Sorg

Ulrich Loering

Martin Schriever

Olaf Conradi

Vladimir Kamenov

Alexander Wolf

Olaf Dittmann

Jörg Schultz

Gerd Reisinger

Jess K&ouml;hler

Dirk Rothweiler

Christian Holland

Christine Sieler

Marcus Zehetbauer

Ulrich Drodofsky

Hans-Joachim Miesner

The disclosure relates to an optical system, such as an illumination system or a projection objective of a microlithographic projection exposure apparatus, including such an optical system having a polarization-influencing optical arrangement which permits enhanced flexibility in affording a desired polarization distribution.

Illumination system or projection objective of a microlithographic projection exposure apparatus

An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane. The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.

Illumination system of a microlithographic projection exposure apparatus

In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.

Microlithographic exposure method as well as a projection exposure system for carrying out the method

A projection objective for imaging an object arranged in an object plane of the projection objective into an image of the object lying in an image plane of the projection objective has a multiplicity of transparent optical elements and holding devices for holding the optical elements at prescribable positions along an imaging beam path of the projection objective. Each of the optical elements has an optical useful region lying in the imaging beam path and an edge region lying outside the optical useful region. At least one holding element of the holding device assigned to the optical element acts at the edge region in the region of a contact zone. At least one of the optical elements is assigned a diaphragm arrangement with a false light diaphragm arranged directly upstream of the optical element and a second false light diaphragm arranged directly downstream of the optical element. Each of the false light diaphragms is fashioned in such a way that the false light diaphragm screens at least a part of the edge region against radiation running outside the imaging beam path.

Projection objective with diaphragms

An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.

The disclosure provides an illumination system of a microlithographic projection exposure apparatus, as well as related methods and components. In some embodiments, the illumination system includes an optical element configured so that, when a linearly polarized entry beam which has an angle spectrum is incident on the first optical element, a maximum aperture angle of the entry beam at the first optical element is not more than 35 mrad. A component, which is rotationally symmetric about an optical axis of the system, of a birefringence present in the illumination system can be at least partially compensated by the first optical element.

The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object () arranged in an object plane () onto a substrate () arranged in an image plane (). The object () is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element () of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object ().

Projection exposure apparatus and method for operating the same

The invention relates to a system for reducing the coherence of a wave front-emitting laser radiation, especially for a projection lens for use in semiconductor lithography, wherein a first partial beam of a laser beam incident on a surface of a resonator body is partially reflected. A second partial beam penetrates the resonator body and emerges from the resonator body at least approximately in the area of entry after a plurality of total internal reflections. The two partial beams are then Passed on jointly to an illumination plane. The resonator body is adapted, in addition to splitting the laser beam into partial beams, to modulate the wave fronts of at least one partial beam during a laser pulse. The partial beams reflected on the resonator body and penetrating the resonator body are superimposed downstream of the resonator body. The resonator body is provided with a phase plate having different local phase distribution.

System for reducing the coherence of laser radiation

There is provided an illumination system. The illumination system includes a first light source and a second light source, each of which are for providing light having a wavelength &#x2266;193 nm, and an optical element. The first light source illuminates a first area of the optical element and the second light source illuminates a second area of the optical element.

EUV illumination system having a plurality of light sources for illuminating an optical element

A method of determining at least one parameter that is characteristic of the angular distribution of light illuminating an object in a projection exposure apparatus is described. This parameter may be, for example, a pupil asymmetry. The method comprises the step of inserting a filter element in or in close proximity of a pupil plane of an illumination system that is arranged between a light source and the object. The filter element has a filter function that varies in an azimuthal direction with respect to the optical axis of the illumination system. Then the intensity of the light in a plane downstream of the pupil plane is measured. After rotating the filter element around the optical axis by an angle &#x3a6;, the measurement of the intensity is repeated. From the filter function, the angle &#x3a6; and the measured intensities the parameter is measured.

Method of determining at least one parameter that is characteristic of the angular distribution of light illuminating an object in a projection exposure apparatus

UV light and a fluid are used in a process for the decontamination of microlithographic projection exposure devices with optical elements or portions thereof, in particular of the surfaces of optical elements. A second UV light source is directed for decontamination, in intervals between exposures, toward at least a portion of the optical elements.

Process for the decontamination of microlithographic projection exposure devices

A projection exposure system, in particular for microlithography, serves to generate an image of an object disposed in an object plane in an image plane. For this purpose, use is made of a light source emitting projection light, illumination optics disposed in the beam path between the light source and the object plane and projection optics disposed in the beam path between the object plane and the image plane. Disposed in the vicinity of a field plane of the illumination optics is at least one optical element that changes the angular illumination distribution of the projection light passing through. The change, impressed by the optical element, in the angular illumination distribution is non-rotationally symmetrical with respect to the optical axis. The optical element can be disposed in various angular positions around an axis perpendicular to the field plane. Such an optical element makes it possible to modify the symmetry of the angular illumination distribution flexibly.

Projection exposure system

A projection exposure device ( ), in particular for micro-lithography, serves to produce an image of an object ( ) in an image plane ( ) positioned in an object plane ( ). For this reason the projection exposure device ( ) has a radiation source ( ) emitting projection radiation ( ). Illumination optics ( ) are positioned between the radiation source ( ) and the object plane ( ) and projection optics ( ) are positioned between the object plane ( ) and the image plane ( ). A detection device ( ) is provided to measure the illumination angle distribution of the projection radiation ( ) in a field plane ( ). This communicates via at least one control device ( ) with at least one manipulator ( ). The latter serves to move at least one optical component ( ) within the projection ray path ( ). The illumination angle distribution changes as a result of the controlled movement of the optical component ( ). This can therefore be adjusted depending on the measurement result and for example adapted to the object structure.

Growing community of inventors

Huettlingen, Germany

Nils Dieckmann