Varian Semiconductor Equipment Associates, Inc.

Nilay A Pradhan

Benjamin Colombeau

Christopher Dennis Bencher

Hans-Joachim Ludwig Gossmann

Naushad K Variam

Adam Brand

Mandar Balasaheb Pandit

Klaus Petry

Stanislav S Todorov

Baonian Guo

Kurt T Decker-Lucke

A method of processing a workpiece to create a doped fin structure is disclosed. A portion of the workpiece is subjected to a pre-amorphizing implant to create an amorphized region. This amorphized region is then implanted with dopant species, at an implant energy and dose so that the dopant species are contained within the amorphized region. The doped amorphized region is then subjected to a laser melt anneal which crystallizes the amorphized region. The dopant profile is box-like, and the dopant is confined to the previously amorphized region.

Method for improving fin isolation

A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species.

Technique for selectively processing three dimensional device

A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.

FinFET device fabrication using thermal implantation

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Somerville, MA, United States of America

Nilay A Pradhan