Mapper Lithography IP B.v.

Asml Netherlands B.v.

Niels Vergeer

Guido De Boer

Godefridus Cornelius Antonius Couweleers

Stijn Willem Herman Karel Steenbrink

Robert Mossel

Kaustubh Prabodh Padhye

Johnny Joannes Jacobus Van Baar

Cor Verburg

Laurens Vincent Plandsoen

Thomas Adriaan Ooms

Vincent Sylvester Kuiper

Erwin Slot

Paul Ijmert Scheffers

Jan Andries Meijer

Thomas Adrian Ooms

Laurens Plandsoen

Cornelis Verburg

A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system () for projecting a plurality of charged particle beamlets () onto the surface of the substrate; a chuck () moveable with respect to the projection system; a beamlet measurement sensor (i.a.i.e.,) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface () for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (), the position mark measurement system comprising an alignment sensor (). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion () for accommodating the surface of the beamlet measurement sensor, and a position mark portion () for accommodating the position mark.

Charged particle lithography system with alignment sensor and beam measurement sensor

A method for operating a target processing system for processing a target () on a chuck (), the method comprising providing at least a first chuck position mark () and a second chuck position mark () on the chuck (); providing an alignment sensing system () arranged for detecting the first and second chuck position marks (), the alignment sensing system () comprising at least a first alignment sensor () and a second alignment sensor (); moving the chuck () to a first position based on at least one measurement of the alignment sensing system (); and measuring at least one value related to the first position of the chuck.

Lithography system and method for processing a target, such as a wafer

The invention relates to a substrate comprising an optical position mark for being read-out by an optical recording head for emitting light of predetermined wavelength, preferably red or infra-red light, more in particular of 635 nm light, the optical position mark having a mark height, a mark length and a predetermined known position on the substrate, the optical position mark extending along a longitudinal direction and being arranged for varying a reflection coefficient of the position mark along said longitudinal direction, wherein the optical position mark comprises:

Method of determining a position of a substrate in a lithography system, substrate for use in such a method, and lithography system for carrying out such method

The invention relates to a differential interferometer module adapted for measuring a direction of displacement between a reference mirror and a measurement mirror. In an embodiment the differential interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to a lithography system comprising such a interferometer module and a method for measuring such a displacement and rotations.

Interferometer module

The invention relates to a lithography system comprising an optical column, a moveable target carrier for displacing a target such as a wafer, and a differential interferometer module, wherein the interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to an interferometer module and method for measuring such a displacement and rotations.

Lithography system with differential interferometer module

A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system () for projecting a plurality of charged particle beamlets () onto the surface of the substrate; a chuck () moveable with respect to the projection system; a beamlet measurement sensor (i.a.) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface () for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (), the position mark measurement system comprising an alignment sensor (). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion () for accommodating the surface of the beamlet measurement sensor, and a position mark portion () for accommodating the position mark.

The invention relates to a multi-axis differential interferometer () for measuring a displacement and/or rotation between a first reflective surface () and a second reflective surface (), wherein said measuring is carried out using at least two pairs of beams, wherein each pair is formed by a measurement beam (Mb) to be emitted onto a first one () of said reflective surfaces, and a reference beam (Rb) to be emitted onto another one () of said reflective surfaces, said interferometer () comprising: a first optical module () and a second optical module (), wherein each optical module () is configured for receiving a respective coherent beam and for creating one of said pairs therefrom. The invention further relates to a lithography system comprising such an interferometer and to a method for assembling such a multi-axis differential interferometer.

Multi-axis differential interferometer

Methods and systems for verification of a mark written on a target surface during a multiple beam lithography process, and for verifying beam position of individual beams on the target surface based on mark verification are disclosed. A mark can be verified by scanning an optical beam over the mark and measuring the reflected optical beam and the position of the target with respect to the optical beam. By comparing the intensity of the reflected light as a function of distance over the mark with reference mark data representing an intended definition of the mark, and any deviation between the measured representation and the reference mark data are determined. If any deviation deviate more than the predetermined limit, incorrectly positioned beams can be verified from the data.

Individual beam pattern placement verification in multiple beam lithography

The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.

Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer

The invention relates to a substrate for use in a lithography system, said substrate being provided with an at least partially reflective position mark comprising an array of structures, the array extending along a longitudinal direction of the mark, characterized in that said structures are arranged for varying a reflection coefficient of the mark along the longitudinal direction, wherein said reflection coefficient is determined for a predetermined wavelength. In an embodiment a specular reflection coefficient varies along the substrate, wherein high order diffractions are substantially absorbed by the substrate. A position of a beam on a substrate can thus be determined based on the intensity of its reflection in the substrate. The invention further relates to a positioning device and lithography system for cooperation with the substrate, and a method of manufacture of the substrate.

Position determination in a lithography system using a substrate having a partially reflective position mark

The invention relates to a lithography system for processing a target, wherein the lithography system comprises a final projection system arranged for projecting a pattern on the target surface. The lithography system comprises a mark position detection system arranged for detecting a position of a position mark on the target surface. The mark position detection system comprises an optical element arranged for projecting a light beam on the target surface and a light detector arranged for detecting a reflected light beam. The optical element may be positioned adjacent to the final projection system and the light detector may be positioned inside a frame.

Lithography system for processing at least a part of a target

The invention relates to alignment of an interferometer module for use in an exposure tool. An alignment method is provided for aligning an interferometer to the tool while outside of the too. Furthermore, the invention provides a dual interferometer module, an alignment frame use in the alignment method, and an exposure tool provided with first mounting surfaces for cooperative engagement with second mounting surfaces of an interferometer module.

Alignment of an interferometer module for use in an exposure tool

The invention relates to a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system arranged for detecting a position mark on a surface.

Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system

Growing community of inventors

Rotterdam, Netherlands

Niels Vergeer