Advanced Technology Materials, Inc.

Entegris, Inc.

Nicole E Thomas

Emanuel Israel Cooper

Michael B Korzenski

William R Bowers

Kevin Paul Yanders

Prerna Sonthalia

Eileen Sparks

Mark A Biscotto

Tianniu Chen

Peng Zhang

Jeffrey A Barnes

Steven Lippy

A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

Composition and process for selectively etching metal nitrides

Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

Compositions and methods for the selective removal of silicon nitride

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Marlborough, MA, United States of America

Nicole E Thomas