S.o.i.tec Silicon on Insulator Technologies

Soitec

Commissariat a L'energie Atomique

Nicolas Sousbie

Bernard Aspar

Chrystelle Lagahe Blanchard

Thierry Barge

Jean-François Michaud

A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidation of the material and a part of the substrate. Additionally, the surface of the oxidized material may be prepared and the surface may be assembled with a second substrate.

Surface roughening process

The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.

Annealing process for annealing a structure

The invention provides a method for forming a semiconductor component with a rough buried interface. The method includes providing a first semiconductor substrate having a first surface of roughness R. The method further includes thermally oxidizing the first surface of the first semiconductor substrate to form an oxide layer defining an external oxide surface on the first semiconductor substrate and a buried oxide-semiconductor interface below the oxide surface, so that the buried oxide surface has a roughness Rthat is less than R. The method also includes assembling the oxide surface of the first semiconductor substrate with a second substrate. The invention also provides a component formed according to the method of the invention.

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Grenoble, France

Nicolas Sousbie