Infineon Technologies Ag

Nicolas Heuck

Roland Speckels

Marco Marchitto

Niels Oeschler

Christian Steininger

Frederik Otto

Lars Böwer

A powder carrier, to which a powder layer containing a metal powder is applied, is provided by an automatic powder carrier feed. A first joining partner is pressed onto the powder layer located on the powder carrier so as to bond a powder layer portion to the first joining partner. The first joining partner is raised from the powder carrier together with the powder layer portion bonded to the first joining partner, and the powder layer portion bonded to the first joining partner is arranged between the first and second joining partners. A sintered join is produced between the first and second joining partners by pressing the first and second joining partners against one another such that the powder layer portion makes contact with both the first and second joining partners. The powder layer portion is sintered as the joining partners are being pressed against one another.

Method for producing an integral join and automatic placement machine

A method for producing a layer including a connecting medium on an assembly partner is provided. The method includes providing a carrier on which the connecting medium is applied. The connecting medium contains a metal in the form of a multiplicity of metal particles. The assembly partner is placed on the connecting medium located on the carrier and pressed onto the connecting medium located on the carrier, so that a layer of the connecting medium adheres to the assembly partner. The assembly partner together with the layer adhering thereto is removed from the carrier. By means of a gas flow, edges of the layer, at which the latter extends laterally beyond the assembly partner, are removed so that a layer residue of the layer remains adhering to the assembly partner.

Method for producing a connecting medium on an assembly partner, method for producing a material-fit connection between an assembly partner and a metal layer, and a system for carrying out the methods

A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

Method for producing a material-bonding connection between a semiconductor chip and a metal layer

A sintered connection is formed by pressing a semiconductor die against a substrate with a dried sintering material interposed between the substrate and the semiconductor die, the dried sintering material having sintering particles and a solvent. The substrate is heated to a temperature below a sintering temperature of the dried sintering material while the semiconductor die is pressed against the substrate to form local sinter connections between adjacent ones of the sintering particles. The local sinter connections collectively provide a stable joint that fixes the semiconductor die to the substrate prior to sintering. A sintered connection is then formed between the semiconductor die and the substrate from the dried sintering material, after the stable joint is formed.

Growing community of inventors

Cremlingen, Germany

Nicolas Heuck