Spts Technologies Limited

Aviza Technology Limited

Nicholas Rimmer

Stephen Robert Burgess

John Macneil

Paul Rich

Anthony Paul Wilby

Amit Rastogi

Andrew Price

Mark Ian Carruthers

A method induces plasma vapor deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilizing a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.

Method of plasma vapour deposition

A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NHon a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450&#xb0; C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (&#x2dc;0.4 at %) and trace levels of incorporated Si (0.01&#x3c;Si&#x3c;0.5 at %).

Method of forming amorphous TiN by thermal chemical vapor deposition (CVD)

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Oxford, United Kingdom

Nicholas Rimmer