International Business Machines Corporation

Other

Neng-hsing Lu

Suryadevara Vijayakumar Babu

Carl-Otto Nilsen

John A Welsh

Ronald S Horwath

John C Lo

A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plurality of electrodes substantially parallel to each other and to substrates alternating therewith. Each of the electrodes is of a hollow configuration and includes a pair of flat sides, each side having a plurality of tapered apertures therein. A means for directing a reactive gas through the apertures toward the substrates is provided. A first bus structure electrically connects the substrates and may be grounded. A second bus structure electrically connects alternate ones of the electrodes and is connected to a first radio frequency power source. A third bus structure electrically connects the remaining ones of the electrodes and is connected to a second radio frequency power source adapted to operate 180 degrees out of phase with the first power source.

Plasma processing apparatus including three bus structures

A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plasma reactor chamber, provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision for forcing the gas through one or more through holes in the substrates, provision for continuously exhausting gas, an automatic transport or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

Side source center sink plasma reactor

A system for generating a substantially uniform plasma for processing a substrate having two major surfaces. Each of the substrate major surfaces may have electrically conductive portions. Two electrodes are oppositely disposed with respect to one another on either side of the substrate. A first r.f. power source is electrically connected to the first electrode and a second r.f. power source is electrically connected to the second electrode. The first and second r.f. power sources are out of phase with respect to one another, resulting in the generation of a substantially uniform plasma field.

Uniform plasma for drill smear removal reactor

A system for generating uniform gas flow in a plasma reactor chamber. A hollow electrode having two major surfaces and a plurality of apertures in both major surfaces is disposed in the chamber. Connected to this hollow electrode is a radio frequency power source for generating an electrical field. A second hollow electrode also having two major surfaces with a plurality of apertures in both surfaces is disposed opposite the first electrode. A second radio frequency power source is connected to the second electrode. A substrate is placed in the chamber between the first and second electrodes. Provision is made for introducing a gas to be converted in a reactive species by the radio frequency electrical field so that gas is uniformly distributed across the substrate. '

Growing community of inventors

Endwell, NY, United States of America

Neng-hsing Lu