Ati Technologies Ulc

Advanced Micro Devices Corporation

Conversant Intellectual Property Management Incorporated

Neil McLellan

Roden R Topacio

Vincent K Chan

Andrew K W Leung

Yip Seng Low

Michael Zhouying Su

Kevin O'Neil

Liane Martinez

Suming Hu

Adam Zbrzezny

Bryan Black

Fei Guo

Gabriel Wong

Terence Cheung

Joe Siegel

Michael S Alfano

Jianguo Li

Silqun Leung

Yue Li

Daniel Chung

Vincent Chan

A method of manufacturing is provided that includes singulating a circuit board from a substrate of plural of the circuit boards, wherein the circuit board is shaped to have four corner hollows. The corner hollows may be various shapes.

Circuit board with corner hollows

Various circuit boards and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first interconnect layer of a circuit board. The first interconnect layer includes a first conductor trace with a first segment that does not include a via land. A first via is formed on the first segment.

Circuit board with via trace connection and method of making the same

Various semiconductor chip packages with undermounted passive devices and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a first side of a carrier substrate where the carrier substrate includes a second side opposite the first side. At least one passive device is coupled to the second side of the carrier substrate. The at least one passive device includes at least one first terminal electrically coupled to the semiconductor chip and at least one second terminal adapted to couple to a printed circuit board.

Semiconductor chip package with undermount passive devices

Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes depositing a layer of a first metallic material on a semiconductor chip. The first layer has a first physical quantity. A layer of a second metallic material is deposited on the layer of the first metallic material. The second layer has a second physical quantity. The first and second layers are reflowed to form a solder structure with a desired ratio of the first metallic material to the second metallic material.

Methods of fabricating semiconductor chip solder structures

An integrated circuit package strip employs a stiffener layer that houses a passive electronic component to maintain mechanical properties when a thinner substrate is used. The use of either a retention wall or a stiffener allows for the manufacture of these integrated circuit package using strip, matrix, or array technology where a larger board with a plurality of integrated circuit packages is produced industrially and then cut to individual units.

Integrated circuit package strip with stiffener

A method of manufacturing semiconductor packages at the wafer level is disclosed. A wafer has multiple integrated circuits (ICs) formed on its active surface, with each IC in communication with a plurality under-bump metallization (UBM) pads formed on one surface the package. The UBM pads include a larger pads near the center of package and smaller UBM pads near the periphery. The method includes attaching a stiffener to an inactive surface of the wafer; forming under bump metallization pads; and forming solder bumps extending from the UBM pads.

Wafer level packaging of semiconductor chips

A method of manufacturing is provided that includes fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip and fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip. Additional chips may be stacked on the first semiconductor chip.

Thermal management of stacked semiconductor chips with electrically non-functional interconnects

Various semiconductor chip input/output structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor chip that has a first conductor pad and a passivation structure. A second conductor pad is fabricated around but not in physical contact with the first conductor pad to leave a gap. The second conductor pad is adapted to protect a portion of the passivation structure.

Method of fabricating a semiconductor chip with supportive terminal pad

Various semiconductor chips and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first opening in an insulating layer applied to a side of a semiconductor chip. The first opening does not extend through to the side. A second opening is formed in the insulating layer that exposes a portion of the side.

Semiconductor chip with underfill anchors

Various circuit boards and methods of fabricating the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling an electrically non-functional component to a surface of a first circuit board. The electrically non-functional component has a first elevation. The surface of the circuit board is adapted to have a semiconductor chip mounted thereon. An electrically functional component is mounted to the surface inward from the electrically non-functional component. The electrically functional component has a second elevation less than the first elevation.

Circuit board component shim structure

Various circuit boards and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first interconnect layer of a circuit board. The first interconnect layer includes a first conductor structure. A first via is formed in the first interconnect layer and in electrical contact with the first conductor structure. The first via has a first oval footprint.

Circuit board with oval micro via

Methods of forming semiconductor chip underfill anchors

Various on-chip capacitors and methods of making the same are disclosed. In one aspect, a method of manufacturing a capacitor is provided that includes forming a first conductor structure on a semiconductor chip and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. The under bump metallization structure overlaps at least a portion of the first conductor structure to provide a capacitor.

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Toronto, Canada

Neil McLellan