Tokyo Electron Limited

Natsumi Torii

Koichi Nagami

Chishio Koshimizu

Jun Abe

There is provided a plasma processing apparatus for performing plasma processing or a substrate, comprising: a chamber; a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a Radio Frequency (RF) power supply for supplying RF power for generating plasma from gases in the chamber; a DC power supply for applying a negative DC voltage to the edge ring; a waveform control element for controlling a waveform of the DC voltage; and a controller for controlling a time taken for the DC voltage to reach a desired value by adjusting a constant of the waveform control element.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus comprising: a chamber; a substrate support disposed in the chamber and including a lower electrode, a substrate supporting surface for supporting a substrate, and an edge ring disposed to surround the substrate placed on the substrate supporting surface; an upper electrode disposed above the lower electrode; a power supply portion configured to supply two or more powers having different frequencies, the power supply portion including a source power supply configured to supply a source power for generating plasma from a gas in the chamber to the upper electrode or the lower electrode, and at least one bias power supply configured to supply one bias power or two or more bias powers having different frequencies to the lower electrode; at least one variable passive component electrically connected to the edge ring; and at least one bypass circuit that electrically connects the power supply portion and the edge ring and is configured to supply a part of at least one power selected from the group consisting of the source power and at least one bias power to the edge ring.

Plasma processing apparatus and etching method

There is provided a wiring abnormality detection method in a plasma processing apparatus. The detection method comprises: applying a DC voltage from a DC power supply; measuring a current flowing in a circuit constituting a DC power supply system; comparing a measured current with a predetermined threshold value; and determining that wiring abnormality has occurred in the circuit constituting the DC power supply system when the measured current is greater than or equal to the threshold value.

Wiring abnormality detection method and plasma processing apparatus

A plasma processing apparatus includes: a chamber; a substrate support provided inside the chamber and including an electrode, an electrostatic chuck provided on the electrode, and an edge ring that is disposed on the electrostatic chuck while surrounding the substrate placed on the electrostatic chuck; a radio-frequency power supply that supplies radio-frequency power for generating plasma from a gas within the chamber; a DC power supply that applies a negative DC voltage to the edge ring; and a controller that controls the radio-frequency power and the DC voltage. The controller controls the apparatus to execute a process including: (a) stopping application of the DC voltage while stopping supply of the radio-frequency power; and (b) starting the application of the DC voltage after a predetermined delay time elapses since the supply of the radio-frequency power.

Provided is a matching device capable of realizing a high-speed matching operation. A matching device of an embodiment includes a series part, a parallel part, and one or more variable direct-current power sources. The series part includes a first diode having a variable capacitance and is provided between an input terminal of a radio frequency wave and an output terminal of a radio frequency wave. The parallel part includes a second diode having a variable capacitance and is provided between a node between the input terminal and the output terminal and a ground. The one or more variable direct-current power sources are provided to apply variable reverse bias voltages to the first diode and the second diode.

Matching device and plasma processing apparatus

In a plasma processing apparatus, a controller controls one or both of a first high frequency power supply and a second high frequency power supply to periodically stop the supply of one or both of the first high frequency power and the second high frequency power. The controller also controls a switching unit to apply a DC voltage to a focus ring from a first time after a predetermined period of time in which a self-bias voltage of a lower electrode is decreased from a start point of each period in which one or both of the first high frequency power and the second high frequency power are supplied and to stop the application of the DC voltage to the focus ring during each period in which the supply of one or both of the first high frequency power and the second high frequency power is stopped.

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Miyagi, Japan

Natsumi Torii