Hoechst Japan Limited

Natsumi Suehiro

Hiroshi Okazaki

Yoshiaki Kinoshita

Seiya Masuda

Takanori Kudo

Munirathna Padmanaban

Georg Pawlowski

Yuko Nozaki

Klaus Juergen Przybilla

Ralph R Dammel

Satoru Funato

Hajime Endo

Yuki Nanjo

Kazuya Nagao

Natsumi Endo

Klaus Jurgen Przybilla

A process for producing a solution of a basic or non-basic sulfonium compound (A) of formulae II-V: ##STR1## wherein R.sup.5, R.sup.6 and R.sup.7 each independently represent a C.sub.1 -C.sub.18 alkyl, aryl or heteroaryl group or an aryl group mono-, di- or tri-substituted with an alkyl, an alkylaryl, an aryl, a halogen, an alkoxy, a phenoxy, a thiophenol, a phenylsulfonyl or a phenylsulphenyl;

Positive-working radiation-sensitive mixture

A chemically amplified resist material comprising: a) a homopolymer or a copolymer of hydroxystyrene or hydroxystyrene partly protected by a group sensitive to an acid such as a tetrahydropyranyl or t-butoxycarbonyl group, b) a dissolution inhibitor such as poly(N,O-acetal) or phenol or bisphenol protected by a group cleavable with an acid, c) a photosensitive compound capable of generating an acid upon exposure, d) a base capable of degrading upon radiation to regulate the line width in a period between the exposure step and the processing steps after exposure, e) a low-molecular weight phenolic or polyphenolic compound having a structure represented by the following general formula or a mixture of the phenolic or polyphenolic compounds: ##STR1## where n is an integer of 1 to 5, m is an integer of 0 to 4, n+m.ltoreq.5, and p is an integer of 1 to 10, each R is a C.sub.1 -C.sub.12 alkyl group or an unsubstituted or substituted cycloalkyl group or a C.sub.1 -C.sub.5 hydroxyalkyl group, provided that hydrogen atoms may be substituted with a halogen atom and, when m is not less than 2, each R may be the same or different; A represents a hydrocarbon atomic grouping, having a valence of p, including an unsubstituted or substituted C.sub.1 -C.sub.100 alicyclic, chain aliphatic, or aromatic hydrocarbon or a combination thereof with the carbon atoms being optionally substituted with an oxygen atom, provided that when p is 1, A may represent a hydrogen atom and, when p is 2, A may represent --S--, --SO--, --SO.sub.2 --, --O--, --CO--, or a direct bond, and f) a solvent for dissolving the components a) to e).

Radiation sensitive composition

A material for the formation of a pattern is provided which has a wide exposure latitude and is less liable to cause a dimensional change of a pattern with a change in exposure. The material comprises (A) a compound having a capability of producing an acid upon irradiation with an active beam, (B) a compound capable of producing a base or increasing its basicity, (C) a compound having at least one bond clearable with an acid and/or (D) a compound insoluble in water but soluble in an aqueous alkaline solution.

Pattern forming material including photoacid and photobase generators

A radiation-sensitive mixture for use in the production of semiconductor elements, which has high sensitivity and high resolution, which can be developed by an aqueous alkaline solution, and which is based on a novel concept in that a stable acid latent image is controlled by using a radiation-decomposable base. The mixture is characterized by comprising as essential components a) a binder which is insoluble in water but soluble in an aqueous alkaline solution; b.sup.1) a compound having at least one bond which can be cleaved by an acid, or b.sup.2) a compound having at least one bond which is crosslinked with the compound a) by an acid; c) a compound which generates an acid when irradiated; and d) a basic iodonium compound.

Radiation-sensitive mixture comprising a basic iodonium compound

Colored, photosensitive resin composition

A chemically amplified radiation sensitive composition comprising: (a) a copolymer such as poly(4-hydroxystyrene-co-styrene), (b) a dissolution inhibitor such as polyacetal or (b') a crosslinking agent, (c) a radiation sensitive compound capable of generating an acid upon exposure to actinic radiation, (d) a radiation sensitive base capable of stabilizing the width of lines throughout steps from exposure to post-exposure bake treatment, and (e) a solvent for dissolving the components (a) to (d), can realize fine lines and spaces down to 0.22 microns, for example, using KrF laser, and possesses excellent heat and etch resistance and adhesiveness to substrates, and produces patterns with low standing waves arising due to substrate reflectiveness of exposed light.

Growing community of inventors

Saitama, Japan

Natsumi Suehiro