Silicon Genesis Corporation

University of California

Nathan W Cheung

Francois J Henley

Timothy David Sands

William S Wong

Chenming Hu

Xiang Lu

William George En

Mikhail Korolik

Luke P Lee

Igor J Malik

Jeonggi Seo

Sharon N Farrens

J Alex Chediak

Zhongsheng Luo

William G Eng

A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

Controlled process and resulting device

A technique for forming a film of material () from a donor substrate (). The technique has a step of introducing energetic particles () through a surface of a donor substrate () to a selected depth () underneath the surface, where the particles have a relatively high concentration to define a donor substrate material () above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate () at the selected depth (), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Controlled cleaving process

A technique for forming a film of material () from a donor substrate (). The technique has a step of forming a stressed region in a selected manner at a selected depth () underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate () at the selected depth (), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Method and device for controlled cleaving process

The present invention relates to a functionally integrated microanalytical system for performing fluorescence spectroscopy. A source of fluorescence-exciting radiation, typically a LED, is integrated onto a substrate along with a photodetector and, in some embodiments, an optical filter. A pixel-to-point laser lift-off process is used to effect this component integration. For those cases in which a filter is required, a thin film bandgap filter is typically used, such as CdS or CdSSe(0&#x3c;x&#x3c;1). A disposable microchannel containing the sample and its fluorescent tag is mounted onto the integrated assembly of LED, photodetector and (optionally) filter. This configuration of components allows the microchannel and sample to be readily removed and replaced, facilitating rapid analysis of multiple samples. Multiple LEDS, detectors and filters (if present) can also be integrated onto the same substrate, permitting multiple wavelength analysis of the sample to be performed concurrently.

Integrated, fluorescence-detecting microanalytical system

A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantaion, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.

Gettering technique for wafers made using a controlled cleaving process

A technique for forming a film of material ( ) from a donor substrate ( ). The technique has a step of forming a stressed region in a selected manner at a selected depth ( ) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate ( ) at the selected depth ( ), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Growing community of inventors

Albany, CA, United States of America

Nathan W Cheung