Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Narae Han

Yongsung Kim

Jeonggyu Song

Jooho Lee

Younsoo Kim

Changseung Lee

Jeongyub Lee

Kiyeon Yang

Eunae Cho

Jaekwan Kim

Jonghwa Shin

Reehyang Kim

Boeun Park

Euae Cho

A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

Capacitor, semiconductor device comprising the capacitor, and method of fabricating the capacitor

Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.

High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same

Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MO; and a leakage current reducing layer including a metal oxide represented by La'M′′O.

Device with dielectric metal oxide layers and semiconductor apparatus including the same

A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InO-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same

High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same

A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

Phase shift device including metal-dielectric composite structure

Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

Growing community of inventors

Suwon-si, South Korea

Narae Han