Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Naoyuki Ishiwata

Masanori Onodera

Eiichi Hoshino

Mitsuo Sakurai

Mitsufumi Naoe

Takahisa Ito

Koji Hosono

Kazumasa Doi

Yasuyuki Kushida

A method of manufacturing a semiconductor device that includes: a first exposing step using a photomask in a first area of a semiconductor substrate; and a second exposing step using the photomask in a second area adjacent to the first area of the semiconductor substrate. The photomask includes a first transmitting pattern having a ring shape that is missing a part, and a supplemental second transmitting pattern having a shape corresponding to the missing part of the first transmitting pattern, so that a closed loop pattern is exposed by the first exposing step and the second exposing step on the semiconductor substrate.

Photomask and method for manufacturing a semiconductor device using the photomask

A photomask capable of preventing a pattern outside a chip region from being transferred onto a wafer. A non-circuit pattern (a monitor pattern for measuring the accuracy of the position of a mask pattern, for example) formed by making openings in which a phase shift layer is exposed only in a light shielding layer is located around the chip region where the light shielding layer is removed and where the phase shift layer in which openings corresponding to circuit patterns are made is exposed. This prevents the non-circuit pattern from being transferred onto the wafer by the influence of a flare.

Photomask, photomask fabrication method, and semiconductor device fabrication method

A method for fabricating a photomask includes the steps of forming a phase shift layer, a light-shielding layer, and a negative resist layer in that order on a transparent substrate, forming a first resist pattern including a pattern corresponding to a transfer pattern by performing first exposure and development on the negative resist layer, forming a light-shielding pattern by etching the light-shielding layer using the first resist pattern as a mask, removing the first resist pattern, and then forming a positive resist layer thereon, forming a second resist pattern including a pattern corresponding to a light-absorbing pattern by performing second exposure and development on the positive resist layer, and forming a phase shift pattern by etching the phase shift layer using the second resist pattern as a mask.

Method for fabricating an attenuated phase shift photomask by separate patterning of negative and positive resist layers with corresponding etching steps for underlying light-shielding and phase shift layers on a transparent substrate

There is provided a method of manufacturing a mask for exposure, which is capable of measuring the phase difference between a shifter portion and a non-shifter portion with good accuracy. A mask for exposure having: two first light-shielding device patterns, which are formed on a quartz substrate (transparent substrate) in a device region at a first gap and extend over a first concave portion; a second device light-shielding pattern at a second gap from the first device light-shielding pattern; two first light-shielding monitor patterns, which are formed on the quartz substrate in a monitor region at a third gap wider than the first gap and extend over a second concave portion; and second light-shielding monitor pattern, which has a fourth gap wider than the second gap from the first light-shielding monitor pattern, in which the size of the first light-shielding monitor pattern is equal to or less than the size of the first light-shielding device pattern.

Mask for exposure and method of manufacturing the same

A method for correcting pattern data is provided which is capable of making a proper correction to data of a pattern having a complicated layout. A correction is made to pattern data affected by a proximity effect when a pattern is formed on a photomask or wafer according to design data for a semiconductor device, by detecting, according to the design data, a space portion being placed on a photomask or wafer and having a specified size occurring between patterns facing each other in a first direction, by producing pattern data corresponding to an assist pattern that fills the space portion, by detecting an edge to be corrected in a position being opposite to an edge of the assist pattern extending in a second direction between the patterns facing each other, out of framing portions of the pattern being placed in parallel and near to the assist pattern, by making a correction being independent of a correction to be made to other edge of the framing portion to the detected edge to be corrected, and by removing the assist pattern.

Method for correcting pattern data and method for manufacturing semiconductor device using same

A transparent optical device is provided with a transparent medium having a front side, at least a portion of the front side being adapted for receiving light. A porous layer is formed on substantially all areas of the front side which are adapted for receiving light. The transparent optical device may have a recessed surface area which is recessed below a remainder area of the front side to define a phase shift photomask. The transparent medium may be made of synthesized silica. The porous layer may be formed by reactive ion etching using gaseous plasma of halogenized hydrocarbon. The front side of the transparent medium may have a portion not adapted for receiving light which may have a metal pattern formed thereon. In producing the transparent optical mask, the porous layer may be formed before or after the metal pattern. The transparent optical device may be formed in an etching chamber in which etching depth is monitored by measuring the transmissivity of a preselected portion of the transparent medium.

Growing community of inventors

Kawasaki, Japan

Naoyuki Ishiwata