Meidensha Corporation

National Institute of Advanced Industrial Science and Technology

Meiden Nanoprocess Innovations, Inc.

Naoto Kameda

Toshinori Miura

Mitsuru Kekura

Tetsuya Nishiguchi

Shingo Ichimura

Hidehiko Nonaka

Shigeru Saitou

Takayuki Hagiwara

An oxide film formed on a film formation surface of a film formation target housed in a chamber includes a first film formed on the film formation surface and a second film formed on a first film surface. The first film is formed on the film formation surface of the film formation target by an ALD first film formation method that uses only an at least 80 volume % ozone gas as an oxidizing agent. The second film is formed on the first film surface by an ALD or CVD second film formation method that is different from the first film formation method. The second film formation method uses OH radicals generated by a radical reaction between high-concentration ozone gas and unsaturated hydrocarbon gas as an oxidizing agent and makes use of the oxidizing power of the radicals to form the oxide film.

Oxide film formation method

Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

Atomic layer deposition device and atomic layer deposition method

Disclosed is a degradable film () in which a barrier layer () is disposed on a surface of a water-soluble polymer layer (). The water-soluble polymer layer () is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer () is made of silicon oxide or silicon oxynitride. The barrier layer () is formed on the water-soluble polymer layer () by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer ().

Degradable resin molding and production method for degradable resin molding

A reforming device () is provided with, on one end side of a chamber (), a gas supply part () and, on the other end side of the chamber (), a gas discharge part (). A support part () for supporting a porous material () is provided between the gas supply part () and the gas discharge part () inside the chamber (). Then, the unsaturated hydrocarbon gas of an unsaturated hydrocarbon supply device () and the ozone gas of an ozone generation device () are supplied into the chamber () via the gas supply part () so as to reform the outer-peripheral-side surface and the inner side surface of the porous material () accommodated inside the chamber (). The gas inside the chamber () is sucked by the gas discharge part () and discharged to the outside of the chamber ().

Reforming device and reforming method for porous material

An atomic layer deposition apparatus () is equipped with a processing substrate () provided in a vacuum container (), and a shower head (). The processing substrate () is provided in the vacuum container (), and the shower head () is provided to be opposed to a processing surface of the processing substrate (). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head () to the processing substrate (). The apparatus () repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (), and a source gas purging step of discharging the source gas supplied to the vacuum container (), to form an oxide film on the surface of the processing substrate (). In the oxidizing agent purging step and/or the source gas purging step, the unsaturated hydrocarbon or ozone is used as the purging gas.

Atomic layer deposition method and atomic layer deposition device

Disclosed is an oxide film forming device including a furnace body in which a workpiece is placed and a furnace cover. A mixed gas diffusion part is disposed on an inner side of the furnace cover via a shield plate. A mixed gas buffer space is provided in the mixed gas diffusion part. A shower head plate is disposed on the mixed gas diffusion part and opposed to the workpiece at a distance of 1 to 100 mm away from the workpiece. An ozone gas buffer space is provided in the furnace cover. A gas flow diffusion plate is disposed in the ozone gas buffer space. The shower head plate has formed therein first slits through which an ozone gas flows and second slits through which a mixed gas flows. The first slits and the second slits are alternately arranged side by side in a short-dimension direction of the slits.

Oxide film forming device

Disclosed is an oxide film formation method that includes supplying an ozone gas having an ozone concentration of 20 to 100 vol %, an unsaturated hydrocarbon gas and a raw material gas to a workpiece () placed in a pressure-reduced treatment furnace (), whereby an oxide film is formed on a surface of the workpiece () by a chemical vapor deposition process. An example of the unsaturated hydrocarbon gas is an ethylene gas. An example of the raw material gas is a TEOS gas. The flow rate of the ozone gas is preferably set equal to or more than twice the total flow rate of the unsaturated hydrocarbon gas and the raw material gas. By this oxide film formation method, the oxide film is formed on the workpiece () at a high deposition rate even under low-temperature conditions of 200&#xb0; C. or lower.

In method and apparatus for oxide film formation, light in an ultraviolet light range is irradiated on a substrate, a starting gas of an organosilicon and an ozone gas are supplied to the substrate to form an oxide film on a surface of the substrate, and the ozone gas is mixed with the starting gas at room temperature and a mixture quantity of the ozone gas with the starting gas is set to be equal to a chemical equivalent or more necessary for totally oxidizing the starting gas.

Growing community of inventors

Moriya, Japan

Naoto Kameda