Kabushiki Kaisha Toshiba

Naomi Fujioka

Takashi Watanabe

Takashi Ishigami

Koichi Watanabe

Yukinobu Suzuki

Yasuo Kohsaka

Hitoshi Iwasaki

Kazuhiro Saito

Masashi Sahashi

Hiromi Fuke

Kenya Sano

Takashi Yamanobe

Nobuo Katsui

A sputtering target contains high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within &#xb1;30% as a whole target. Dispersion of the oxygen content is within &#xb1;80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.

Sputtering target

A sputter target is made of a Ti&mdash;Al alloy containing Al in the range of 1 to 30 atm %. In the Ti&mdash;Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti&mdash;Al alloy is 500 &mgr;m or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti&mdash;Al&mdash;N film as a barrier film is formed by using the sputter target made of the Ti&mdash;Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.

Sputter target, barrier film and electronic component

Sputtering target and antiferromagnetic film and magneto-resistance

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Zama, Japan

Naomi Fujioka