Tokyo Electron Limited

Rohm Co., Ltd.

Tokyo University of Agriculture and Technology

Naoki Yoshii

Yasuhiko Kojima

Yoshiyuki Kobayashi

Tadahiro Ishizaka

Atsushi Gomi

Junichi Arami

Akinori Koukitu

Yoshinao Kumagai

Kohei Kawamura

Takashi Shigeoka

Yasuhiro Oshima

Kenjiro Koizumi

Tetsuo Fujii

Koumei Matsuzawa

Katsuji Kadosawa

Kimitomo Kaji

Yukio Fukuda

There is provision of a plasma spraying device including a supplying section configured to convey feedstock powder with a plasma generating gas, and to inject the feedstock powder and the plasma generating gas from an opening of a tip; a plasma generating section configured to generate a plasma by decomposing the injected plasma generating gas using electric power of 500 W to 10 kW; and a chamber causing the supplying section and the plasma generating section to be an enclosed region, which is configured to deposit the feedstock powder on a workpiece by melting the feedstock powder by the plasma generated in the enclosed region. The feedstock powder is any one of lithium (Li), aluminum (Al), copper (Cu), silver (Ag), and gold (Au). A particle diameter of the feedstock powder is between 1 &#x3bc;m and 50 &#x3bc;m.

Plasma spraying device and method for manufacturing battery electrode

It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.

Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device

A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

Method of forming film, film forming apparatus and storage medium

A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; His used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.

Copper film deposition method

The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel, includes a gas introducing ring memberfor introducing the gas from the exterior of the processing vessel, a disk-like rotary baseprovided rotatably below a top platein the processing vessel, and a ring-shaped gas injection ring memberprovided around a rotary baseso as to be closer and opposed to the gas introducing ring member. A gas injecting slitis provided in the ring-shaped gas injection ring member, the slitbeing formed along the circumferential direction of the rotary base. A ring-shaped gas guide grooveis provided on at least either one of opposing side faces of the gas introducing ring memberand gas injection ring member, along the circumferential direction, corresponding to a gas introducing port.

Gas introducing mechanism and processing apparatus for processing object to be processed

An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.

Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium

A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device () excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (). A switching mechanism () is arranged between the excitation device () and the process chamber (), and a bypass line () is connected to the switching mechanism (). The switching mechanism () switches the flow of the excited reducing gas from the excitation device () between the process chamber () and the bypass line ().

Gas switching mechanism for plasma processing apparatus

There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.

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Nirasaki, Japan

Naoki Yoshii