Canon Anelva Corporation

Mitsubishi Heavy Industries Limited

Phyzchemix Corporation

Naoki Yahata

Hitoshi Sakamoto

Toshihiko Nishimori

Yoshiyuki Ooba

Ryuichi Matsuda

Ikumasa Koshiro

Hiroshi Tonegawa

Yuzuru Ogura

A Clgas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Clgas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

In a metal film production apparatus, a copper plate member is etched with a Clgas plasma within a chamber to form a precursor comprising a Cu component and a Clgas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Clgas, and the Cl* is supplied into the chamber to withdraw a Clgas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Method and apparatus for production of metal film or the like

Barrier metal film production method

A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Clgas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuCl). The precursor (CuCl) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

Metal film production apparatus

Interconnection structure

A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuCl, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuClgas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

Metal film vapor phase deposition method and vapor phase deposition apparatus

Growing community of inventors

Takasago, Japan

Naoki Yahata