Tokyo Electron Limited

Naoki Shibata

Kousuke Yoshihara

Atsushi Matsumoto

Shintaro Aoyama

Koji Maekawa

Shinichi Hatakeyama

Susumu Arima

Takashi Sameshima

Mikio Suzuki

Takafumi Hasimoto

Yuichi Yoshida

Minoru Kubota

Kentaro Yoshihara

Hiroyuki Ide

A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

Film forming method, storage medium, and film forming system

A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

Method of forming tungsten film

There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

Method of forming a tungsten film having a low resistance

There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t-t); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t-t). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t-t).

Coating method, computer storage medium and coating apparatus

There are provided a liquid processing method, a liquid processing apparatus and a recording medium for liquid processing which can enhance the uniformity of the coating state of a processing liquid on a substrate. A coating unit includes a rotary holder for rotating a wafer, a nozzle for supplying a processing liquid onto a surface of the wafer, and a controller for controlling the position of the nozzle with respect to the wafer. A liquid processing method includes: starting the supply of the processing liquid to the surface of the wafer at an eccentric position at a distance from the center of rotation of the wafer, and moving the position on the wafer to which the processing liquid is supplied toward the center of rotation of the wafer while rotating the wafer at a first rotational speed; and, after the processing liquid supply position has reached the center of rotation of the wafer, rotating the wafer at a second rotational speed which is higher than the first rotational speed, thereby allowing the processing liquid to spread toward the periphery of the wafer.

Liquid processing method, liquid processing apparatus and recording medium

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Koshi, Japan

Naoki Shibata