Fuji Electric Co., Ltd.

Naoki Ito

Tsuneo Watanabe

Yoshiyuki Sakai

Yuichi Urano

Yoshiyuki Sugahara

Masato Nishizawa

Shinichi Hashimoto

Toshio Komori

A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

Semiconductor device manufacturing method

In a method of the invention, a semiconductor device is manufactured. A partially poly-crystalline silicon thin film is formed on a substrate by a CVD method at a film formation temperature of 550.degree. C. or lower by using a source gas containing silane. Then, a metal silicide film is formed on the silicon thin film at a film formation temperature of 500.degree. C. or lower to form a film lamination. After patterning and etching the film lamination, the film lamination is heat treated and simultaneously crystallized to integrally bond the film lamination.

Method of manufacturing a polycide electrode

A thin film transformer which is fabricated on a substrate includes first and second thin film coils. One of the coils includes either of at least two spiral shaped coil parts that are disposed below an insulation layer and either of at least two spiral shaped coil parts that are disposed above the insulation layer, the coil parts being connected through a connection hole in the insulation layer, with terminals for the coil being located outside the outer loops of the coil parts. The other of the coils includes other coil parts that are connected through a connection hole in the insulation layer, with terminals again being located outside the outer loops of the coil parts. With this configuration, the first and second thin film coils have terminals that are located outside of the outer loops of the coils. Side-by-side transformers whose primaries and secondaries are connected so as to form a single transformer are also disclosed.

Thin film transformer

Thin films having controlled properties are formed on a substrate by a method comprising the steps of

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Kawasaki, Japan

Naoki Ito