Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Naohisa Tamada

Yuki Miyamoto

Shuji Nakao

Shinroku Maejima

Yoshiaki Yamada

Toshihide Kawachi

A photomask for focus monitoring of the present invention is provided with a substrate that allows the exposure light to pass through and a unit mask structure for focus monitoring. Unit mask structure for focus monitoring has two patterns, and that are formed on the surface of substrate and a light blocking film that has a rear surface pattern that is formed on the rear surface of substrate for substantially differentiating the incident directions of the exposure light that enters two patterns, and for position measurement. When the dimension of rear surface pattern is L and the wavelength of the exposure light is &#x3bb;, L/&#x3bb; is 10, or greater.

Method of focus monitoring and manufacturing method for an electronic device

In the layout of a photomask for pattern transfer, main patterns for transferring an image to a photosensitive film are positioned; auxiliary patterns, which do not substantially transfer an image to a photosensitive film are temporarily positioned; an auxiliary pattern is selected so an end partially overlaps an end of the main pattern and makes contact with the main pattern; and adjusting the position of the auxiliary pattern selected so that the end of the auxiliary pattern selected completely overlaps the end of the main pattern. Inspection of the photomask for mask defects is simplified while achieving an increase in resolution of a photomask for pattern transfer.

Method of pattern layout of a photomask for pattern transfer

Non-telecentric illuminating light obtained by controlling the shape of an opening of an illumination aperture is directed onto a photomask, and a characteristic such that an image of a pattern of the photomask formed by the non-telecentric illumination moves in the direction perpendicular to an optical axis when an image-forming plane is moved in the direction of the optical axis, to perform focus monitoring. This eliminates the need for a special photomask, so that inexpensive and highly precise focus monitoring method, focus monitoring apparatus, and a method of manufacturing a semiconductor device can be obtained.

Focus monitoring method, focus monitoring apparatus, and method of manufacturing semiconductor device

A photomask for focus monitoring of the present invention is provided with a substrate that allows the exposure light to pass through and a unit mask structure for focus monitoring. Unit mask structure for focus monitoring has two patterns, and that are formed on the surface of substrate and a light blocking film that has a rear surface pattern that is formed on the rear surface of substrate for substantially differentiating the incident directions of the exposure light that enters two patterns, and for position measurement. When the dimension of rear surface pattern is L and the wavelength of the exposure light is &lgr;, L/&lgr; is 10, or greater.

Photomask for focus monitoring

A shading member is mounted on the upper side of a corner portion of a shading zone area corresponding to an area causing triple exposure with an adhesive. It is possible to provide a phase shift mask capable of readily exposing a semiconductor substrate with no bad influence on adjacent exposed areas.

Phase shift mask and semiconductor device fabricated with the phase shift mask

Semiconductor device achieving higher integration, method of manufacturing thereof, and method of forming resist pattern used therefor

A reticle that allows deviation in rotation and magnification of an exposure region detected just using a wafer subjected to exposure and development without having to provide an underlying pattern, a pattern transferred using such a reticle, and a correction method are achieved. A first measurement pattern is provided on a dicing line pattern of the X axis direction. Also, a second measurement pattern is formed on a line of extension of the first measurement pattern in the Y axis direction. Similarly, a third measurement pattern is formed on the dicing line pattern in the Y axis direction. A fourth measurement pattern is provided corresponding to the third measurement pattern.

Growing community of inventors

Hyogo, Japan

Naohisa Tamada