Hitachi-high-technologies Corporation

Konami Digital Entertainment Co., Ltd.

Mitsubishi Rayon Company, Limited

Naohiro Yamamoto

Makoto Suyama

Kentaro Yamada

Daisuke Fujita

Masato Ishimaru

Takahiro Abe

Yasumi Takase

Naoki Tarama

Atsushi Yoshida

Takeshi Shimada

Jun Hayakawa

Tsutomu Tetsuka

Makoto Satake

Naoyuki Fukahori

Takashi Nishibori

Yumi Yoshida

Kota Wakasa

Manabu Hazama

Keiko Sato

Syuichiro Tokuda

Hidenori Osawa

Hidenori Toyooka

Norihiro Hosaka

According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.

Plasma processing method

In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.

Plasma etching method

The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.

In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.

The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Method of manufacturing magnetoresistive element

A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using Ngas; and a second step of etching the laminated films after the first step using mixed gas of Ngas and gas containing carbon elements.

Provided is a game device which executes a game configured such that a position of a body part of a player is detected, including: a first determination unit for determining whether or not a reference position and a player position information acquired at a first determination time point, which is earlier than a reference time point, satisfy a first criterion; a second determination unit for determining whether or not the reference position and the player position information acquired at a second determination time point, which is later than the first determination time point, satisfy a second criterion; a first processing execution unit for performing processing relating to effects on the game based on a determination result from the first determination unit; and a second processing execution unit for performing processing relating to evaluation of the player based on a determination result from the second determination unit.

Game device, control method for a game device, and a non-transitory information storage medium

A game device of a computer game includes plural unit games, each of which can be completed when a requirement for completion is satisfied. The game device includes: a rule storage unit for storing rules of the computer game, in which the rules include rules stipulating the requirement for completion of each of the plural unit games and rules stipulating a content of play of each of the plural unit games; a difficulty changer for rewriting a rule stored in the rule storage unit so as to change a level of difficulty for completion of at least one unit game among the plural unit games; and a play processor for conducting a unit game selection process for enabling a player to select one from among the plural unit games, a play execution process for executing play of the selected unit game in accordance with the rule stipulating the content of play stored in the rule storage unit, and a decision process for deciding whether or not the unit game is completed on the basis of the rule stipulating the requirement for completion stored in the rule storage unit.

Game device

To provide a game device capable of selecting game data to be played by a player when playing a game in a straightforward manner. One or a plurality of primary play candidate data names are selected from secondary play candidate data containing one or a plurality of items of game data and names for this game data. A primary play candidate data file configured so as to contain primary play candidate data name information necessary for displaying the selected primary play candidate name(s) is stored in a storage media. One or a plurality of primary play candidate data names is then displayed based on the stored primary play candidate data name information. One or a plurality of the displayed primary play candidate data names is selected as one or a plurality of play target data names. A game can then be controlled based on game data for the selected play target data name(s).

Game device, program, information storage medium, game device control method, game distribution method, and game distribution device

An optical fiber photoconductor, comprising at least two multi-filament plastic optical fiber units arranged in parallel and having a substantially rectangular peripheral shape and at least one end fixed in a cap, each optical fiber unit having 50 to 10000 core-sheath light-transmitting islands having a diameter of 5 to 200.mu., which are densely arranged in a sea portion, wherein in each of the multi-filament plastic optical fiber units having a rectangular sectional shape, the end face fixed in the cap is expanded so that the length of one side of the end face is at least 1.01 times the original length of one side of the rectangular peripheral shape of the multi-filament plastic optical fiber unit, whereby a bonding interface between the multi-filament plastic optical fiber units substantially disappears.

Growing community of inventors

Tokyo, Japan

Naohiro Yamamoto