Ngk Insulators, Inc.

Other

Toyo Denki Seizo Kabushiki Kaisha

Naohiro Shimizu

Takeshi Sakuma

Takayuki Sekiya

Hiroshi Mizuno

Yuichiro Imanishi

Kimihiro Muraoka

Takashige Tamamushi

Shoji Yokoi

Sozaburo Hotta

Katsuji Iida

Wataru Shionoya

Yuuichirou Imanishi

Shozo Ishii

Masakazu Kimura

Kinji Yoshioka

Masashi Yura

Keun Sam Lee

Yoshiaki Ikeda

In a plasma treatment method, at least a surface of a target object is treated using a plasma treatment apparatus at least including a discharge electrode section configured to cause electric discharge based on supply of a high voltage pulse from a pulse power supply, by supplying fluid including nitrogen into the discharge electrode section to generate plasma by electric discharge in the discharge electrode section and applying resultant active species and the fluid to the target object. The flow rate of the fluid is in a range of 20 mm/s to 500 mm/s. Electrical energy per area of the discharge electrode section in the pulse power supply is 1.4&#xd7;10(J/cm) or more. The separation distance from the center of the discharge electrode section to the target object is in a range of 3 mm to 1700 mm.

Plasma treatment method

A semiconductor device contains a semiconductor substrate, a cathode, an anode, and a gate electrode. The semiconductor device has a cathode segment disposed in a portion corresponding to at least the cathode, an anode segment disposed in a portion corresponding to the anode, a plurality of embedded segments disposed in a portion closer to the cathode segment than to the anode segment, a takeoff segment disposed between the gate electrode and the embedded segments to electrically connect the gate electrode to the embedded segments, and a channel segment disposed between the adjacent embedded segments.

Buried gate static induction thyristor

A semiconductor device satisfies the condition Db&#x2266;(&#x2153;)&#xd7;Da, in which Da represents a distance between a top surface of a cathode segment and an end of an embedded gate segment facing an anode segment, and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment and an end of the cathode segment facing the anode segment.

Semiconductor device and method for producing the same

A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.

Plasma treating apparatus

A gas reforming device including: a flow passage forming body flow passage through which process gas flows; a cathode provided on a cross section of the flow passage; an anode provided apart from the cathode, and including a bar-like portion; and a pulse power supply that applies a pulse voltage between the cathode and the anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows.

Gas reforming device

To provide a plasma igniter capable of generating a discharge such as a pulse streamer discharge in a large region even by application of a low voltage, implementing powerful ignition by pulse voltage application in two or more stages, improving an air-fuel ratio (A/F), and reducing a COemission amount. A plasma igniter includes an igniter part having a combustion chamber, and a discharge part arranged in such a manner that its discharge tip end is exposed to the combustion chamber. The discharge tip end has a column-shaped anode, an annular cathode arranged to be a predetermined interval away from an anode tip end part, and an annular floating electrode arranged between the anode tip end part and the cathode.

Plasma igniter and ignition device for internal combustion engine

This invention concerns with the plasma inactivating method and processor that can inactivate the surface of the object without causing the degradation inside of it. The inactivation of toxins on the surface of the object proceeds as removing the toxins by nitriding or oxidizing the toxins by the following triple effects, the sharp pulsed electric field by the supply of the electric pulses, the generated N-radicals (N*) contained inside of the plasma in the surrounding gases composed mainly by Ngas under the low pressure.

Plasma processing methods for inactivating toxins

A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thicknesses and impurity concentrations of a base region and a buffer region are determined such that a peak voltage obtained by a peak current at which a punch-through state is brought about does not exceed a breakdown voltage of the SIThy. Such design can achieve an SIThy having a self protecting function of autonomously preventing its breakdown without compromising a turn-on performance in which the peak voltage does not drastically exceed the breakdown voltage of the SIThy even when the peak current increases. Further, a compact SIThy capable of generating a short pulse can be achieved by reducing a gate-channel current-carrying area to a minimum.

Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor

An apparatus for treating harmful substances contained in a waste gas discharged from waste burning pants includes an insulating honeycomb structural body made of ceramics containing a photocatalytic material, a number of through holes formed in the honeycomb structural body in parallel with each other, first and second mesh electrodes arranged on respective end surfaces of the honeycomb structural body, and a pulse supply source connected across the first and second mesh electrodes. A waste gas flows through the through holes formed in the honeycomb structural body, while pulse corona discharge plasma is uniformly generated along the through holes. Harmful substances contained in the waste gas are decomposed by the high energy electrons and radicals generated by the discharge plasma, and the photocatalytic material is excited by ultraviolet radiation emitted from the discharge plasma to produce active oxygen which decomposes and/or oxidizes the harmful substances.

Method of treating substance and apparatus for carrying out the same

Plural p -type regions are formed on a silicon substrate, and thereafter, an n-type epitaxial growth layer is formed. Narrow concave portions are formed to extend between the surface of the epitaxial growth layer and the silicon substrate and to have the almost the same lateral sectional shape. As a result, remaining parts, which are defined by the concave portions, of the epitaxial growth layer on p -type field limiting rings are separated from the silicon substrate. Thus, a depletion layer is spread beyond the field limiting rings and a large forward voltage-resistance can be realized.

Edge structure for relaxing electric field of semiconductor device having an embedded type diffusion structure

A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section formed by an n silicon substrate , p gate regions formed in one surface of the substrate, a p anode region formed in the other surface of the substrate, a main diode section having a cathode region formed by the silicon substrate and an anode region formed in the one surface of the substrate, and a series arrangement of diodes including plural p anode regions , plural n cathode contact regions formed in the first surface of the substrate, and plural conductive layers connecting these anode regions and cathode contact legions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode and an anode electrode of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.

Semiconductor device with reverse conducting faculty

The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits simultaneous formation of the both region and have high-speed performance and a RC thyristor of a buried-gate or recessed-gate structure which has a high breakdown voltage by the use of a buried-gate or recessed-gate structure, permits simultaneous formation of thyristor and diode regions and high-speed, high current switching performance, and the RC thyristor of the planar-gate structure has a construction which comprises an SI thyristor or miniaturized GTO of a planar-gate structure in the thyristor region and an SI diode of a planar structure in the diode region, the diode region having at its cathode side a Schottky contact between n emitters or diode cathode shorted region and the thyristor region having at its anode side an SI anode shorted structure formed by p.sup.+ anode layers, wave-shaped anode layers or anode n.sup.+ layers; in the case of a high breakdown device, an n buffer layer is added; similarly the RC thyristor of the buried-gate or recessed-gate structure has a construction which comprises an SI thyristor of a buried-gate or recessed-gate structure at the thyristor region and an SI diode of the buried or recessed structure.

Reverse conducting thyristor with a planar-gate, buried-gate, or

The present invention is to provide a Static Induction semiconductor device with a Static Induction Schottky shorted structure where the main electrode region is composed of regions of higher and lower impurity densities relative to each other, the main electrode forms an ohmic contact with the higher impurity density region and also forms a Schottky contact with a Static Induction Schottky shorted region of the lower impurity density region surrounded by tile higher impurity density region, and it is excellent in turn-off performance and easy to use, by substantially reducing tile minority carrier storage time, the fall time and the quantity of gate pull-out charges in order that charges may easily be pulled out from the cathode or source electrode as well as from the gate electrode at turn-off.

Static induction semiconductor device with a static induction schottky

The present invention is to provide a static induction semiconductor device with a distributed main electrode structure and a static induction semiconductor device with a static induction main electrode shorted structure where the main electrode region is composed of regions of higher and lower impurity densities relative to each other and formed partly in contact with the lower impurity density region as well, and alternatively a static induction short-circuit region opposite in conductivity type to the main electrode region is formed in the lower impurity density region surrounded by the higher impurity density region.

Growing community of inventors

Miura, Japan

Naohiro Shimizu