Samsung Electronics Co., Ltd.

Naohiko Okunishi

Seungbo Shim

Minyoung Hur

Byeongsang Kim

Sungjin Kim

Sang-Ho Lee

Dougyong Sung

Kyung-Sun Kim

Seung Bo Shim

Donghyeon Na

Namkyun Kim

Kuihyun Yoon

Nam Kyun Kim

Dongseok Han

Yunhwan Kim

Yoonbum Nam

Inseok Seo

Yoong Chung

Kang Min Jeon

An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer

An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

Impedance measurement jig and method of controlling a substrate-processing apparatus using the jig

A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

Plasma processing apparatus and method of fabricating semiconductor device using same

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Hwaseong-si, South Korea

Naohiko Okunishi