Mitsubishi Denki Kabushiki Kaisha

Other

Seiko Instruments Inc

Mitsubishi Electric Corporation

Naohiko Fujino

Masashi Ohmori

Shigeru Wakiyama

Isamu Karino

Masatoshi Yasutake

Hiroshi Tanaka

Satoru Kotoh

Hiroshi Sasai

Akira Nishimoto

Junji Kobayashi

Kazuo Kuramoto

Koichi A Ono

Akihiko Furukawa

Masahiro Sekine

Tomohiro Sasagawa

Hiroshi Kurokawa

Tsuyoshi Horikawa

Akihiro Suzuki

Takaaki Kawahara

Toshiyuki Oishi

Taisuke Furukawa

Nobuyoshi Hattori

Noboru Mikami

Kenyu Haruta

Hitoshi Wakata

Kenichi Kuroda

Mutsumi Tsuda

Hideki Yabe

Junji Tanimura

Osamu Wada

Tetsuya Takami

Kazuyoshi Kojima

Yoshio Saito

Yukihiko Wada

Kouji Kise

Jiro Naka

Noriko Hirano

Akimasa Yuki

Tetsuo Makita

Hiroshi Kuroki

Tetsuo Ogama

Yasuji Matsui

Fusami Soeda

Yoshitsugu Nakagawa

Koichiro Hori

Masahi Ohmori

Keisuke Nanba

It is so adapted that a sample is mounted on three-dimensional stages through a sample holder and a beam light emitted from a beam light oscillator is applied to a sample surface through a polarizing element different from polarization of the beam light or directly. An image of a foreign-matter on the sample surface scattered by the beam light is displayed on a monitor through a polarizing element different from the beam light, through a CCD camera mounted on an optical microscope. As a method of bringing the beam light until it is applied to the sample surface, there are a method of using an optical fiber for the beam light and a method of using an optical part such as a mirror.

Surface analyzing apparatus

Method and apparatus for analyzing minute foreign substance, and process for semiconductor elements or liquid crystal elements by use thereof

A system capable of detecting the presence and location of foreign matter on a sample includes a beam light applying system for projecting a beam of light onto a sample surface, an optical microscope for receiving light reflected from the sample surface in response to application of the beam light and for confirming the existence and location of foreign matter on the sample surface by observing scattering of the applied beam light by the foreign matter, and a polarizing element for polarizing light in such a manner that light scattered by a regular pattern on the sample is reduced by the polarization and light scattered by foreign matter on the sample is not reduced by the polarization. The system may be combined with a probe microscope for detecting a characteristic of the sample by monitoring an affect on a probe caused by the sample surface.

To enable observation, analysis and evaluation of minute foreign substances by adopting a method for enabling performance of linkage between equipment coordinates of a particle examination equipment and apparatus coordinates of an analyzing apparatus such as SEM which is not a particle examination equipment with a precision higher than that with which coordinate linkage is performed between conventional equipment and apparatus coordinates. An analyzing method for analyzing minute foreign substances comprises the steps of determining the position of a minute foreign substance on the surface of a sample in a particle examination equipment, transferring the sample to a coordinate stage of an analyzing apparatus and inputting the position of the minute foreign substance determined by the particle examination equipment to thereby analyze the contents of this minute foreign substance. It is characterized by linking the equipment coordinates adopted by the particle examination equipment with the apparatus coordinates adopted by the analyzing apparatus by use of the same coordinate system based on the configurations of the sample.

Analyzing method and apparatus for minute foreign substances, and manufacturing methods for manufacturing semiconductor device and liquid crystal display device using the same

A method for recovering impurities on a surface of a silicon wafer includes a first step of using a pretreatment solution to decompose an oxide film, a nitride film on an oxynitridation film formed at a peripheral portion on a surface of a silicon wafer and to remove impurities on the peripheral portion and a second step of recovering impurities on the surface of the wafer expect for the peripheral portion.

Apparatus for recovering impurities from a silicon wafer

A probe microscope carries a so-called active anti-vibration table in which a vibration to a anti-vibration table plate by a floor vibration is detected by a shift meter, an acceleration sensor or the like, and a vibration having an opposite phase to that of this vibration is given to the anti-vibration table plate, thereby reducing an external vibration component from the floor vibration also in the apparatus installation site having frequencies from a low frequency component to a high frequency component.

Surface analyzing apparatus with anti-vibration table

To provide a minute foreign matter analysis method and device wherein the observation, analysis and estimation of minute foreign matter is permitted by linking the device coordinate of a particle inspection device and those of other analysis devices with by far higher accuracy. A minute foreign matter analysis method comprising the steps of: determining the position of a minute foreign substance on the surface of a sample in a particle test unit; transferring said sample onto a coordinate stage of an analysis unit; inputting the position determined by said particle test unit for the minute foreign substance to the coordinate stage of the analysis unit; and analyzing the contents of the relevant minute foreign substance wherein at least one of the unit coordinate to be employed in said particle test unit and the unit coordinate to be employed in said analysis unit is previously corrected using a standard wafer which has a scale on the surface so that coordination systems of said particle test unit and said analysis unit can be linked each other.

Method for analyzing minute foreign substance elements

A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

Thin film forming apparatus using laser

In a particle detecting method, a light beam is projected on a surface of a workpiece. By a microscope focused on a spot of the light beam, formed is an image of irregularly reflected light irregularly reflected by a minute dust particle lying on the surface of the workpiece. The image of the irregularly reflected light is taken by an image pickup tube disposed at a position corresponding to the eyepiece unit of the microscope. The image of the irregularly reflected light is displayed on a screen of a display tube. The image is analyzed by a computer to determine the position of the minute dust particle on the workpiece in an X-Y plane. Further, the workpiece or the microscope is moved in an X-Y plane to inspect the entire surface of the workpiece.

Particle detecting method and system for detecting minute particles on a

To enable observation, analysis and evaluation of minute foreign substances by adopting a method for enabling performance of linkage between equipment coordinates of a particle examination equipment and apparatus coordinates of an analyzing apparatus such as SEM which is not a particle examination equipment with a precision higher than that with which coordinate linkage is performed between conventional equipment and apparatus coordinates. An analyzing method for analyzing minute foreign substances includes the steps of determining the position of a minute foreign substance on the surface of a sample in a particle examination equipment, transferring the sample to a coordinate stage of an analyzing apparatus and inputting the position of the minute foreign substance determined by the particle examination equipment to thereby analyze the contents of this minute foreign substance. It is characterized by linking the equipment coordinates adopted by the particle examination equipment with the apparatus coordinates adopted by the analyzing apparatus by use of the same coordinate system based on the configurations of the sample.

Analyzing method and apparatus for minute foreign substances, and

Methods wherein a partial region of a fine foreign matter which is detected first in a particle counter is detected again, observed, analyzed and evaluated by irradiating a spot of beam light to the region, observing a scattered light from a dark field or a dark part in the spot from a blight field, a coordinate of the analyzer being linked with a coordinate of the partial counter and registered in the analyzer. Thereby semiconductor devices or liquid crystal display devices are inspected accurately and immediately.

Method of detecting the position and the content of fine foreign matter

A light-scattering optical system is incorporated in an AFM instrument for a large sample. The instrument is equipped with an optical microscope. Incident light is introduced into the optical microscope to provide a dark field. The incident angle to the surface of a sample is made variable. The incident light is introduced into the main enclosure of the AFM through two optical fibers. Light reflected from the surface of the sample is received by a detector split into two parts. The dark field microscope is automatically brought to focus in response to signals from the detector. The whole apparatus is enclosed in a sound-insulating dark box to enhance the S/N during detection of scattered light.

Optical scanning system utilizing an atomic force microscope and an

A semiconductor cleaning apparatus includes a cassette loader/unloader for moving a cassette; a product loader/unloader for loading a wafer into and unloading a wafer from a cassette; a cleaner for cleaning a wafer; a water cleaner for cleaning with water a wafer that has been cleaned in the cleaner; a dryer for drying the wafer that has been cleaned with water in the water cleaner; and a conveyance having a wafer grasping hand for directly holding a wafer unloaded from a cassette and sequentially conveying the wafer held by the wafer hand to the cleaner, the water cleaner, and the dryer.

Semiconductor cleaning apparatus and wafer cassette

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Tokyo, Japan

Naohiko Fujino