Nitto-denko Corporation

Naohide Takamoto

Goji Shiga

Fumiteru Asai

Takeshi Matsumura

Hiroyuki Senzai

Takashi Oda

Sadahito Misumi

Hiroyuki Hanazono

Kosuke Morita

Akihiro Fukui

Yasuhiro Amano

Miki Hayashi

Toshimasa Sugimura

Eiji Toyoda

Hiroshi Noro

Ryuichi Kimura

Akiyoshi Yamamoto

Tomokazu Takahashi

Yusuke Komoto

Masami Oikawa

Tsubasa Miki

The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200&#xb0; C. or more or a metal.

Film for flip chip type semiconductor back surface and its use

The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (&#x3b3;2&#x2212;&#x3b3;1) of the surface free energy &#x3b3;2 and the surface free energy &#x3b3;1 is 10 mJ/mor more, where &#x3b3;1 represents the surface free energy of the pressure-sensitive adhesive layer and &#x3b3;2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.

Dicing-tape integrated film for backside of semiconductor and method of manufacturing semiconductor device

An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150&#xb0; C. before heating treatment of 50 Pa&#xb7;s or more and 3,000 Pa&#xb7;s or less, a viscosity change rate of 500% or less, at 150&#xb0; C. as a result of the heating treatment, and a reaction rate represented by {(Qt&#x2212;Qh)/Qt}&#xd7;100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from &#x2212;50&#xb0; C. to 300&#xb0; C. and Qh is a total calorific value in a process of temperature rise from &#x2212;50&#xb0; C. to 300&#xb0; C. after heating at 175&#xb0; C. for 2 hours in a DSC measurement.

Underfill material, laminated sheet and method for producing semiconductor device

The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23&#xb0; C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23&#xb0; C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

Film for back surface of flip-chip semiconductor

It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70&#xb0; C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25&#xb0; C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.

Film for semiconductor back surface and its use

The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most &#x2154; of the thickness of the separator.

Film for semiconductor device production, method for producing film for semiconductor device production, and method for semiconductor device production

The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23&#xb0; C. is 2 g/100 ml or less.

The present invention provides an adhesive sheet used in manufacture of a semiconductor device, containing a filler having an average particle size of 0.3 &#x3bc;m or less and an acrylic resin, wherein the content of the filler is in the range of 20 to 45% by weight with respect to the entire adhesive sheet, and the content of the acrylic resin is in the range of 40 to 70% by weight with respect to entire resin components.

Adhesive sheet used in manufacture of semiconductor device, adhesive sheet integrated with dicing tape, semiconductor device, and method of manufacturing semiconductor device

The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

Dicing tape-integrated film for semiconductor back surface

Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa&#xb7;s or less at 60 to 100&#xb0; C.

Reinforcing sheet and method for producing secondary mounted semiconductor device

The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E' [MPa] and a thermal expansion coefficient &#x3b1; [ppm/K] after carrying out a heat-curing treatment at 175&#xb0; C. for an hour satisfy the following formula (1) at 25&#xb0; C.:&#x2032;&#xd7;&#x3b1;&#x3c;250000 [Pa/K]&#x2003;&#x2003;(1).

Under-fill material and method for producing semiconductor device

The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

An object of the present invention is to provide a method of manufacturing a flip-chip type semiconductor device with a simplified process, in which various types of information are supplied in a visually recognizable manner. The present invention relates to a method of manufacturing a flip-chip type semiconductor device comprising: a step A of laminating on a semiconductor wafer a film for the backside of a flip-chip type semiconductor, in which the film is to be formed on the backside of a semiconductor element that is flip-chip connected onto an adherend; a step B of dicing the semiconductor wafer; and a step C of laser marking the film for the backside of a flip-chip type semiconductor, wherein the film for the backside of a flip-chip type semiconductor in the step C is uncured.

Method of manufacturing flip-chip type semiconductor device

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23&#xb0; C. to 165&#xb0; C. of 100 ppm/&#xb0; C. to 400 ppm/&#xb0; C.

Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device

The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1&#xd7;10Pa&#xb7;S or more and 2&#xd7;10Pa&#xb7;S or less, and the shear modulus of the adhesive layer is 1&#xd7;10Pa or more and 2&#xd7;10Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120&#xb0; C.

Growing community of inventors

Osaka, Japan

Naohide Takamoto