Tokyo Electron Limited

Nao Koizumi

Eiichi Nishimura

Masato Kushibiki

Fumiko Yamashita

Takashi Sone

Daisuke Urayama

Wataru Kume

A plasma processing method of etching a multilayered material having a structure where a first magnetic layerand a second magnetic layerare stacked with an insulating layertherebetween is performed by a plasma processing apparatusincluding a processing chamberwhere a processing space S is formed; and a gas supply unitof supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl, and the second processing gas contains H.

Plasma processing method and plasma processing apparatus

A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CFgas into the processing chamber.

Etching method and substrate processing apparatus

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Miyagi, Japan

Nao Koizumi