Jsr Corporation

Nakaatsu Yoshimura

Yousuke Konno

Hikaru Sugita

Keiji Konno

Fumihiro Toyokawa

Junichi Takahashi

Nobuyuki Ito

Hideaki Masuko

Yuichi Hashiguchi

Mibuko Shimada

Norihiro Natsume

Satomi Hasegawa

A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Method for forming resist under layer film, pattern forming method and composition for resist under layer film

A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.

Pattern-forming method

A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.

Composition for forming resist lower layer film

This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300&#xb0; C. or higher to form a resist under layer film.

Pattern forming method

A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein Rrepresents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more Rs may be the same or different and two or more Xs may be the same or different.

Composition for forming lower layer film and pattern forming method

An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25&#xb0; C. of 45 mN/m or lower.

Composition for forming antireflection film, layered product, and method of forming resist pattern

An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein Rand Rrepresent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

Composition for forming antireflection film, laminate, and method for forming resist pattern

The dielectric-forming composition according to the invention is characterized by consisting of: In addition, another dielectric-forming composition according to the invention is characterized by containing:

Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof

A polymer composition containing a specific silyl group-containing polymer, in which the maximum size of particles contained therein is 2 &mgr;m or less, and the number of particles having a size of 0.2 &mgr;m to 2 &mgr;m is 1,000 particles/ml or less. The composition may further contain a specific compound or at least one component selected from an organosilane represented by (R ) Si(X) , a hydrolyzate of the organosilane and a condensate of the organosilane. The composition is excellent in storage stability, high in hardness and excellent in mechanical strength such as wear resistance, so that a coating film having good taking-up properties even when no lubricant is contained, extremely smooth and having no difference in film thickness can be formed.

Growing community of inventors

Tokyo, Japan

Nakaatsu Yoshimura