International Business Machines Corporation

Infineon Technologies Ag

Naftall E Lustig

Anthony K Stamper

Yun Yu Wang

Soon-Cheon Seo

John Anthony Fitzsimmons

Tze-Chiang Chen

Vincent James McGahay

Erdem Kaltalioglu

Terence Lawrence Kane

Brett H Engel

Ann H McDonald

Daniel C Edelstein

Stephen Ellinwood Luce

Keith Randal Pope

Wilma Jean Horkans

Peter D Roper

An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereof

An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereof

Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis.

Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing

Growing community of inventors

Croton on Hudson, NY, United States of America

Naftall E Lustig