Jusung Engineering Co., Ltd.

Nae-Eung Lee

Gi-Chung Kwon

Hui-Tae Kim

Duck-Ho Kim

Jong-Won Shon

Hack-Joo Lee

Chang-Ki Park

Bong-Soo Kwon

Chun-Hee Lee

A method of forming a thin film pattern includes: forming a thin film on a substrate; forming an amorphous carbon layer including first and second carbon layers on the thin film, wherein the first carbon layer is formed by one of a spin-on method and a plasma enhanced chemical vapor deposition (PECVD) method and the second carbon layer is formed by a physical vapor deposition (PVD) method; forming a hard mask layer on the amorphous carbon layer; forming a PR pattern on the hard mask layer; forming a hard mask pattern by etching the hard mask layer using the PR pattern as an etch mask; forming an amorphous carbon pattern including first and second carbon patterns by etching the amorphous carbon layer using the hard mask pattern as an etch mask; and forming a thin film pattern by etching the thin film using the amorphous carbon pattern.

Method of forming thin film pattern for semiconductor device and apparatus for the same

The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHF(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CHFand Hgases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Method of forming etching mask

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Gyeonggi-do, South Korea

Nae-Eung Lee