Samsung Electronics Co., Ltd.

Myungsun Choi

Seungbo Shim

Dougyong Sung

Hoyong Park

Junghyun Cho

Minyoung Hur

Namjun Kang

Minjae Lee

Yonghee Kim

Donghyeon Na

Hyeongmo Kang

Byunghun Han

Yongwoo Lee

Jaehak Lee

Nam Kyun Kim

Youngjin Noh

Soonam Park

Kyuho Kim

Sungjun Ann

Janggyoo Yang

Dooyoung Gwak

Jaemin Ha

An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.

Operation method of etching apparatus and method of manufacturing semiconductor device using the same

A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Plasma etching method and semiconductor device fabrication method including the same

Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method

Electrostatic chucks, plasma processing apparatuses, and methods of fabricating semiconductor devices using the same are provided. The electrostatic chuck includes a chuck base, an upper plate provided on the chuck base, and an inner plate provided between the chuck base and the upper plate. A first diameter of the inner plate is less than a second diameter of the upper plate.

Electrostatic chuck and plasma processing apparatus including the same

Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

Method of plasma etching and method of fabricating semiconductor device using the same

Growing community of inventors

Hwaseong-si, South Korea

Myungsun Choi