Samsung Electronics Co., Ltd.

Myoung-Ho Jung

Sang-Gyun Woo

Gi-Sung Yeo

Cha-Won Koh

Hyun-woo Kim

Jin Kuk Hong

Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.

Method of forming pattern

A method of forming an underlayer of a bi-layer resist including forming a blended material by blending a polymer having an aromatic group and a methacrylate polymer, and coating a substrate with the blended material. The blended material coated on the substrate is irradiated to form an underlayer. The polymer having the aromatic group may be a novolac polymer or a naphthalene polymer.

Growing community of inventors

Yonging-si, South Korea

Myoung-Ho Jung