Tokyo Electron Limited

Xerox Corporation

Arizona Board of Regents, a Body Corporate

Murray D Sirkis

Wayne L Johnson

Joseph T Verdeyen

Eric J Strang

Andrej Mitrovic

Richard Parsons

John Edward Cronin

Arthur M Gooray

Jovan Jevtic

Kenneth C Peter

Yuji Tsukamoto

Bill H Quon

Medona B Denton

Yu Wang Bibby

A method and apparatus for generating and controlling a plasma () formed in a capacitively coupled plasma system () having a plasma electrode () and a bias electrode in the form of a workpiece support member (), wherein the plasma electrode is unitary and has multiple regions (R) defined by a plurality of RF power feed lines () and the RF power delivered thereto. The electrode regions may also be defined as electrode segments () separated by insulators (). A set of process parameters A={n, &#x3c4;, &#x3a6;, P, S; L} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations L, &#x3c4;is the on-time of the RF power for the iRF feed line, &#x3a6;is the phase of the iRF feed line relative to a select one of the other RF feed lines, Pis the RF power delivered to the electrode through the iRF feed line at location L, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece () being processed with a desired amount or degree of process uniformity.

Method and apparatus for improved plasma processing uniformity

A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signal. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.

Addition of power at selected harmonics of plasma processor drive frequency

A method and system for using transmission spectroscopy to measure a temperature of a substrate (). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder () to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate () can also be measured.

Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer

A system for measuring plasma electron densities (e.g., in the range of 1010 to 1012 cm&#x2212;3) and for controlling a plasma generator. Measurement of the plasma electron density is used as part of a feedback control in plasma-assisted processes, such as depositions or etches. Both the plasma measurement method and system generate a control voltage that in turn controls the plasma generator. A programmable frequency source sequentially excites a number of the resonant modes of an open resonator placed within the plasma processing apparatus. The resonant frequencies of the resonant modes depend on the plasma electron density in the space between the reflectors of the open resonator. The apparatus automatically determines the increase in the resonant frequency of an arbitrarily chosen resonant mode of the open resonator due to the introduction of a plasma and compares that measured frequency to data previously entered. The comparison is by any one of (1) dedicated circuitry, (2) a digital signal processor, and (3) a specially programmed general purpose computer. The comparator calculates a control signal which is used to modify the power output of the plasma generator as necessary to achieve the desired plasma electron density.

Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma

A method and system for controlling electron densities in a plasma processing system. By applying a dither voltage and a correction voltage to a voltage-controlled oscillator, electron (plasma) density of a plasma processing system (acting as an open resonator) may be measured and controlled as part of a plasma-based process.

Stabilized oscillator circuit for plasma density measurement

A plasma processing system includes an automated electrode retention mechanism ( ) for providing automated engagement of a source electrode ( ) with a drive electrode ( ). In addition, an automated electrode handling system ( ) is provided that has the ability to remove a source electrode ( ) from the electrode retention mechanism and replace it with a second source electrode ( ) that is stored in a staging area ( ) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system ( ) coupled thereto.

Automated electrode replacement apparatus for a plasma processing system

A system for measuring plasma electon densities (e.g., in the range of 10 to 10 cm ) and for controlling a plasma generator ( ). Measurement of the plasma density is essential if plasma-assisted processes, such depositions or etches, are to be adequately controlled using a feedback control. Both the plasma measurement method and system generate a control voltage that in turn controls the plasma generator ( ) to maintain the plasma electron density at a pre-selected value. The system utilizes a frequency stabilization system to lock the frequency of a local oscillator ( ) to the resonant frequency of an open microwave resonator ( ) when the resonant frequency changes due to the introduction of a plasma within the open resonator. The amplified output voltage of a second microwave discriminator may be used to control a plasma generator ( ).

Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma

A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.

Method and apparatus for determination and control of plasma state

A method and system for measuring at least one of a plasma density and an electron density (e.g., in a range of 10 to 10 electrons/cm ) using plasma induced changes in the frequency of a microwave oscillator. Measurement of at least one of the plasma density and the electron density enables plasma-assisted processes, such as depositions or etches, to be controlled using a feedback control. Both the measurement method and system generate a control voltage that in turn controls a plasma generator to maintain at least one of the plasma density and the electron density at a pre-selected value.

Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator

An apparatus for drying ink deposited upon cut sheet of paper. The apparatus includes a microwave generating member to generate microwave energy for the ink and an applying member connected to said microwave generating member to apply resonating traveling microwaves to the paper. The applicator member includes a serpentine applicator for drying the ink and includes input slots and output slots for moving cut sheet of paper through the serpentine applicator. A transport member transports ink printed cut sheet paper stock from the input slot to the output slot by a belt running through the center of the applicator.

Apparatus and method for drying ink deposited by ink jet printing

Means and method including a novel waveguide sample holder for applying traveling microwaves to heat thin low-resistivity semiconductor ribbons and wafers without a susceptor. Traveling microwaves are applied to the semiconductor materials, both with and without a traveling wave resonator. Efficient coupling is obtained by unique placement of the samples in the waveguide.

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Tempe, AZ, United States of America

Murray D Sirkis