Bell Telephone Laboratories

Bell Communications Research, Inc.

Murrae J Bowden

Larry F Thompson

Antoni S Gozdz

Cletus W Wilkins, Jr

Eugene D Feit

Gregory L Baker

Cynthia F Klausner

A sensitive deep utltraviolet radiation resist suitable for use in two layer lithography is obtained by brominating poly (1-trimethylsilylpropyne). Positive patterned layers are obtained by coating a substrate with the polymer, irradiating it with ultraviolet radiation, baking the polymer and developing the irradiated portions.

Silicon-containing polymers as resists

Poly(alkenyltrialkylsilane sulfone)s have been found to be electron beam sensitive and suitable for use as positive resists in a two layer resist system. The described resists are prepared by the polymerization of an .omega.-alkenyltrimethylsilane with sulfur dioxide with or without a second solubilizing olefinic compound. The resultant composition evidences high sensitivity, excellent resolution characteristics and excellent resistance to oxygen reactive-ion etching.

Electron beam sensitive positive resist comprising the polymerization

A phase compatibile polymer blend serves as a radiation sensitive lithographic resist in the fabrication of circuits and circuit elements. Radiation sensitivity is due to inclusion of a 'modifier'. Resist properties, notably stability to agents and ambients to be masked are attributed largely to a second component, the 'matrix polymer'. In an exemplary embodiment in which the blend is positive acting, fabrication including dry processing is dependent upon use of a resist blend of a vapor developing polysulfone and a novolac. The novolac, inherently soluble in alkaline media is rendered insoluble in the blend. Radiation initiated depolymerization results in volatilization of the modifier to render the irradiated portions of the resist soluble in alkaline developers. Modifier may function in other manner; for example, it may undergo radiation initiated polymerization so as to insolubilize the blend in irradiated regions, so resulting in a negative acting resist. Effective isolation of lithographic from masking functions permits design of blends with high lithographic sensitivity, as well as good processing stability. The latter is sufficient to permit use in many dry processing procedures as practiced in direct writing, as well as in mask fabrication of large scale integrated silicon circuits.

Fabrication based on radiation sensitive resists and related products

Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

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Summit, NJ, United States of America

Murrae J Bowden