Korea University Research and Business Foundation

Samsung Display Co., Ltd.

MunPyo Hong

Hyun Min Cho

Sang Gab Kim

Jun Young Lee

Ho Won Yoon

You Jong Lee

Yun-Sung Jang

Seong Yong Kwon

A copper plasma etching method according an exemplary embodiment includes: placing a substrate on a susceptor in a process chamber of a plasma etching apparatus; supplying an etching gas that include hydrogen chloride into the process chamber; plasma-etching a conductor layer that include copper in the substrate; and maintaining a temperature of the susceptor at 10&#xb0; C. or less during the plasma-etching.

Copper plasma etching method and manufacturing method of display panel

A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/mor more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

Apparatus for forming gas blocking layer and method thereof

Growing community of inventors

Seongnam-si, South Korea

MunPyo Hong