Sumitomo Metal Industries, Inc.

Tokyo Electron Limited

Ibiden Company Limited

Other

Octec, Inc.

Muneo Harada

Toshiyuki Matsumoto

Yoshihiro Hirota

Hiroyuki Hashimoto

Shigeru Ando

Naoki Ikeuchi

Takaya Miyano

Katsuya Okumura

Takahiro Kitano

Ken Nakao

Kippei Sugita

Tomohisa Hoshino

Tatsuo Hiroshima

Shuichi Kawano

Tomotaka Shinoda

Koichi Nakano

Yoshiki Yamanishi

Tatsuzo Kawaguchi

Takahiko Ooasa

Kinji Yamada

Makoto Yamamoto

Kenji Tanaka

Guoliang Shou

Masato Hayashi

Kazunori Motohashi

Masami Yakabe

Itaru Iida

Eiji Yamaguchi

Tetsuya Hasebe

Shengmin Lin

Kenji Matsuda

Shoichi Fukui

Takahiko Oasa

Hiroyuki Moriyama

A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.

Method for depositing a film and film deposition apparatus

The method includes forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate; forming an organic insulating film in the hole; removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode; cleaning an exposed surface of the electrode by using plasma of an inert gas; filling a conductive metal in the hole; removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma; and annealing the substrate in a dysoxidative atmosphere.

Method of manufacturing semiconductor device

Provided is a method for manufacturing a semiconductor device which includes: providing a plurality of semiconductor substrates formed with through holes which penetrate between main surfaces of the substrates and are filled with porous conductors; stacking the plurality of semiconductor substrates while aligning the porous conductors filled in the through holes; introducing conductive ink containing particle-like conductors into the porous conductors of the plurality of stacked semiconductor substrates; and sintering the plurality of stacked semiconductor substrates.

Method for manufacturing semiconductor device

A wall surface of a film forming container is heated to or above a vaporization temperature of a material monomer, which is used to form an organic film, by using an external heater formed along the wall surface of the film forming container, substrates are heated to a thermal polymerization reaction temperature by using an internal heater that is disposed apart from the external heater and near a substrate-supporting container in which the substrates are received, and the organic film is formed through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container.

Film forming apparatus and film forming method

A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

Capacitor and manufacturing method thereof

A method for manufacturing a probe needle having beams and a contactor placed on tips of the beams comprises preparing a Si wafer, forming a seed layeron the Si wafer, and forming grooves in a desired shape of the beams on the seed layerby patterning a photoresist. Subsequently, the grooves are filled up with metal-plated layersto form the desired shape of beams.

Probe needle, method for manufacturing the probe needle and method for constructing a three-dimensional structure

A first wiring layeris disposed on an insulating filmon the lower surface of an upper substrate, while a second wiring layerthree-dimensionally crossing the first wiring layeris provided on the insulating filmon a lower substrate. A cantileverhas one end connected to the first wiring layerand the other end opposed to the second wiring layerwith a space therebetween. A thermoplastic sheetis arranged on the upper substrateso as to cover the through-hole. The thermoplastic sheetis pressed by a heated pinagainst the cantileverand deformed so as to maintain the connection between the cantileverand the second wiring layer, and therefore close the switch

Switch array

A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

Dielectric film capacitor and method of manufacturing the same

In an acceleration sensor detecting inclined displacement of a predetermined article from a basic position, the acceleration sensor () includes a sensor chip having a detection plane including one detection axis or two crossing detection axes detecting the inclined displacement. An axis orthogonal to the detection plane of the sensor chip is disposed in parallel with a standard plane of the article in the basic position. Then, the sensor chip obtains an output signal according to the inclined displacement of the standard plane.

Acceleration sensor and inclination-detecting method

A microstructure includes a mass; a base member in which the mass is movably contained. The mass includes a surface, which is exposed out of the base member, and a stopper wire, which is arranged above the surface of the mass so as to inhibit over move of the mass.

Microstructure with movable mass

A vibration wave detector having a first diaphragm for receiving vibration waves, such as sound waves and so on, to be propagated in a medium, a resonant unit having a plurality of cantilever resonators each having such a length as to resonate at an individual predetermined frequency, a retaining rod for retaining the resonant unit, a second diaphragm positioned on the opposite side of the first diaphragm with respect to the retaining rod, and a vibration intensity detector for detecting the vibration intensity, for each predetermined frequency, of each of the resonators, by the vibration waves received by the first diaphragm and propagated to the resonant unit through the retaining rod.

Vibration wave detector

An apparatus for detecting an impedance variable in response to a sensed physical amount of a sensor is provided which comprises an impedance-frequency conversion unit and a counter. The impedance-frequency conversion unit converts the sensor impedance to an oscillation signal a frequency of which corresponds to the sensor impedance. The impedance-frequency conversion unit comprises an impedance-voltage converter for providing a voltage corresponding to the sensor impedance, and a Wien bridge oscillator including an element an impedance of which varies in response to the voltage from the impedance-voltage converter, for generating the oscillation signal. The Wien bridge oscillator is capable of generating a square wave signal as the oscillation signal. The counter counts the number of waves (or wave number) of the oscillation signal in a predetermined time period to output a count value which can be handled as a digital signal.

Impedance detection apparatus and method of physical variable

A impedance-to-voltage converter for converting an impedance of a target to a voltage is described which comprises an operational amplifier (OP), a coaxial cable consisting a signal line and shielding element(s), and an AC signal generator. A feedback impedance circuit is connected between output and inverting terminals of the OP, and whereby a non-inverting terminal and the inverting terminal are an imaginal-short condition. One end of the signal line is connected to the inverting input terminal of the OP and the other end is connected to one electrode of the target and the AC signal generator is connected to the non-inverting input terminal of the OP. The shielding element comprises at least one shielding layer surrounding the signal line and is connected to the non-inverting input terminal of the OP, and thus the signal line and the shielding layer are the same voltage due to the imaginal-short of the input terminals of the OP, resulting in reduction of noise on the signal line.

Impedance-to-voltage converter

A static capacitance-to-voltage converter is capable of converting a static capacitance into a voltage without suffering from a stray capacitance formed between a signal and a shielding line or a stray capacitance formed between an exposed portion of the signal line and its surroundings. The static capacitance-to-voltage converter is formed of an operational amplifier placed in an imaginary short-circuit state between an inverting input and a non-inverting input thereof; a signal line having one end connected to the inverting input and the other end capable of being connected to a static capacitance; a shielding line surrounding the signal line and connected to the non-inverting input; an alternating current signal generator for applying the non-inverting input with an alternating current signal; and zero adjusters for adjusting the output of the static capacitance-to-voltage converter to minimum when no static capacitance is connected to the signal line.

Growing community of inventors

Nishinomiya, Japan

Muneo Harada